MIJ-NSR Author Index, J

MIJ-NSR Author Index, J

Bart Jacobs

Highly Chemical Reactive Ion Etching of Gallium Nitride

Koen Jacobs

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
Highly Chemical Reactive Ion Etching of Gallium Nitride

W. M. Jadwisienczak

C. Jagadish

The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films

U. Jahn

Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

B. Jahnen

Pinholes, Dislocations and Strain Relaxation in InGaN

Ho Won Jang

Room Temperature Ohmic contact on n-type GaN using plasma treatment

Ja-Soon Jang

High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment

B. el Jani

Alternative N precursors and Mg doped GaN grown by MOVPE

J. Jasinski

H N Jayatirtha

TEM Study of Bulk AlN Growth by Physical Vapor Transport

Jung Ho Je

N. J. Jeffs

Chang Min Jeon

Room Temperature Ohmic contact on n-type GaN using plasma treatment

Wonho Jhe

Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

H-X. Jiang

R. L. Jiang

Fabrication and Characterization of Metal-Ferroelectric-GaN Structures

W. Jiang

Effects of Oxygen Ion Implantation in Gallium Nitride

B. Jobst

Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

M.A.L. Johnson

N.M. Johnson

A. M. Johnston

Growth Rate Reduction of GaN Due to Ga Surface Accumulation

B. Johs

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

F. Jomard

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

Ken Jones

R. Jones

R.L. Jones

High Quality Hydrothermal ZnO Crystals

V. Joshkin

Holger Juergensen

S. Juillaguet

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

J. Jun

K. B. Jung

H. Jürgensen

MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser

M. J. Jurkovic

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer

Index last updated Monday, February 10, 2003 4:39:13 PM.
© 2003 The Materials Research Society