MIJ-NSR Author Index, H

H. Haag

• Optical nonlinearities of Gallium Nitride
  

K.W. Haberern

• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  

Volker Haerle

• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
  
• Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
  

S. Haffouz

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  
• p-doping of GaN by MOVPE
  
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  

P. R. Hageman

• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  
• Highly Chemical Reactive Ion Etching of Gallium Nitride
  
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  

Y.B. Hahn

• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  

Masahiro Haino

• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  

E.E. Haller

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  

M. Halliwell

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  

Paul H. Holloway

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  

Jung Han

• Properties and Effects of Hydrogen in GaN
  
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  
• Growth of InN by MBE
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  
• Microstructure of GaN Grown on (111) Si by MOCVD
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• Processing And Device Performance Of GaN Power Rectifiers
  
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
  
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

Myung Soo Han

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  

R. Handschuh

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  

A. Hangleiter

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  
• The role of piezoelectric fields in GaN-based quantum wells
  
• Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells
  
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

D.M. Hansen

• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  
• Structural Properties of Laterally Overgrown GaN
  
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  

M. Hansen

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  

D. Hanser

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  
• Pinholes, Dislocations and Strain Relaxation in InGaN
  

M Hao

• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

V. Härle

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

S. Harney

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

D. L. Harris

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  

Janet C. Harris

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

James S. Harris

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  

M. Harris

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  
• High Quality Hydrothermal ZnO Crystals
  

Ian Harrison

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  

E. H. Hartford

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

P.J. Hartlieb

• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Photoluminescence Characterization of Mg Implanted GaN
  

H. L. Hartnagel

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  

R. J. Hauenstein

• A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
  

M. Haugk

• Extended Defects in GaN: A Theoretical Study
  

E. Haus

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

N. Hayashi

• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  

J.M. Hayes

• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
  
• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  

J. M. Hayes

• New Technique for Sublimation Growth of AlN Single Crystals
  

Cliff C. Hayman

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

D.C. Hays

• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  

T.J. Headley

• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  

P.J. Heard

• Focused Ion Beam Etching of GaN
  

Sean Hearne

• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  

M.I. Heggie

• Extended Defects in GaN: A Theoretical Study
  
• Structural and Electronic Properties of Line Defects in GaN
  

Heidrun Heinke

• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  

Ruediger Held

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  

E. S. Hellman

• The Polarity of GaN: a Critical Review
  
• Growth of Ga-face and N-face GaN films using ZnO Substrates
  
• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  
• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  
• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  
• Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
  

A. Henry

• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
  
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  

Richard L. Henry

• GaN Decomposition in Ammonia
  
• Enhanced GaN Decomposition At MOVPE Pressures
  
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

S. Heppel

• The role of piezoelectric fields in GaN-based quantum wells
  

N. Herres

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

S. D. Hersee

• Properties of GaN epilayers grown on misoriented sapphire substrates
  
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

M. Heuken

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  

B. Heying

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

R. Hickman

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  

R. Hickman

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  

Adrian Hierro

• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  

K. Higashimine

• Growth of InN by MBE
  

Ryan Higgins

• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
  

R. Hildebrandt

• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
  

C.R. Hills

• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
  

Kazumasa Hiramatsu

• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
  
• Gain Spectroscopy of HVPE-Grown GaN
  
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
  
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  

Akira Hirano

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  

A. Hirata

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  
• Optical Properties of AlGaN Quantum Well Structures
  

H. Hirayama

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  
• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  
• Optical Properties of AlGaN Quantum Well Structures
  
• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
  

Yuichi Hiroyama

• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
  

Lionel Hirsch

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  

M.T. Hirsch

• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  

W.Y. Ho

• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  
• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  

J. E. Hoelscher

• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
  

A. Hoffmann

• Gain Spectroscopy of HVPE-Grown GaN
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Influence of Doping on the Lattice Dynamics GaN
  
• Mechanisms of Optical Gain in Cubic GaN and InGaN
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  

M. Hofmann

• Transient four wave mixing experiments on GaN
  

T. Hofmann

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  

Hans C. Hofsaess

• Photoluminescence Characterization of Mg Implanted GaN
  

Daniel Hofstetter

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  

Susan Hogg

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  

F. Höhnsdorf

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

L. J. Holbert

• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
  
• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
  

B. Holländer

• Determination of the dislocation densities in GaN on c-oriented sapphire
  

J. Holst

• Mechanisms of Optical Gain in Cubic GaN and InGaN
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Gain Spectroscopy of HVPE-Grown GaN
  
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  

Mark Holtz

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

P.O. Holtz

• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  

D. Hommel

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  
• Influence of Doping on the Lattice Dynamics GaN
  
• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  
• Studies on Carbon As Alternative p-Type Dopant for GaN
  

U. Hommerich

• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  

T. Honda

• Characteristic Temperature Estimation for GaN-Based Lasers
  

Chang-Hee Hong

• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
  
• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

J. Hong

• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  

Moon-Hi Hong

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

Tetsuya Hoshi

• High Temperature Hardness of Bulk Single Crystal GaN
  

Katsuyuki Hoshino

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

Tim Hossain

• TEM Study of Bulk AlN Growth by Physical Vapor Transport
  

J. T. Hsieh

• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  

K.C. Hsieh

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

Y. Hsu

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  

J. Hu

• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  

Changhe Huang

• Temperature Effect on the Quality of AlN Thin Films
  

Z. C. Huang

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  

S.M. Hubbard

• Free excitons in strained MOCVD-grown GaN layers
  

L.G.Hubert-Pfalzgraf

• p-doping of GaN by MOVPE
  

R. Hudgins

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  

Frederik Huet

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  

O. H. Hughes

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  

Bedwyr Humphreys

• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  

C. J. Humphreys

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  

Wei-Hsu Hung

• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  

Ok Hwan Cha

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  

H.L. Hwang

• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  
• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  

J.M. Hwang

• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
  

Jung-Min Hwang

• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
  

Yong Gyoo Hwang

• GaN Nanotubes
  

Y. Hwu

• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
  

Index last updated Monday, February 10, 2003 4:39:10 PM.
© 2003 The Materials Research Society