MIJ-NSR Author Index, G

B. Gaffey

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

Gordon H. Gainer

• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  

Yungeng Gao

• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
  

J. Garczynski

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  

J. A. Garrido

• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  

M. Garter

• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
  

R. Gaska

• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
  
• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
  
• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  

C. Gaspar

• Temperature behaviour of the yellow emission in GaN
  

Andrea Gasparotto

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  

W.K. Ge

• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
  

T. Gehrke

• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  
• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  
• Photoluminescence Characterization of Mg Implanted GaN
  

T. George

• Electron Beam Pumped MQW InGaN/GaN Laser
  

D. Gerthsen

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

F. Gertram

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  

O. Gfrorer

• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
  

M. Gherasimova

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

C. Giannini

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

Pierre Gibart

• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  
• Temperature behaviour of the yellow emission in GaN
  
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
  
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  
• XPS study of Au/GaN and Pt/GaN contacts
  
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  
• Alternative N precursors and Mg doped GaN grown by MOVPE
  
• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  
• Yellow luminescence in Mg-doped GaN
  
• Metal/GaN Contacts Studied by Electron Spectroscopies
  
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  
• p-doping of GaN by MOVPE
  
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  
• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  

Bernard Gil

• Raman Determination of the Phonon Deformation Potentials in -GaN
  
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  
• Material Properties of GaN in the Context of Electronic Devices
  
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  

G.D. Gilliland

• Temperature Dependence of Bound Exciton Emissions in GaN
  

P. Gilliot

• Optical nonlinearities of Gallium Nitride
  

H.P. Gillis

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  

G. Girolami

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  

E.R. Glaser

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  

E. O. Göbel

• Transient four wave mixing experiments on GaN
  

M. Godlewski

• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  
• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  

A. Goeldner

• Optical Investigations of AlGaN on GaN Epitaxial Films
  

Ian D Goepfert

• Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
  

Y. Golan

• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  

K. Golaszewska

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  

E. Goldys

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  

E.M. Goldys

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
  

Enos Gombia

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  

John J. Gomes

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  

S.A. Goodman

• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  

I. Gorczyca

• Native defects and carbon impurity in cubic BN
  
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  

C. Gorla

• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
  

R.J. Gorman

• Enhanced GaN Decomposition At MOVPE Pressures
  

V. Gottschalch

• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  

Matthew Govett

• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  

A. V. Govorkov

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  

Nicolas Grandjean

• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  
• Thermal Stability of GaN Investigated by Raman Scattering
  
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
  

JŸrgen Graul

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

Luis Grave de Peralta

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

David W. Greve

• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
  
• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
  
• Schottky Diodes on MOCVD Grown AlGaN Films.
  
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
  
• Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  

W. Grieshaber

• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  

J. Griffin

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  

K Grigorov

• XPS study of Au/GaN and Pt/GaN contacts
  

S T F Grimson

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  

R. Grober

• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  

J. Groenen

• Raman study of Ga_1-xAl_xN solid solutions
  

Michael T. Grossner

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

P.A. Grudowski

• TEM Study of Defects in Laterally Overgrown GaN Layers
  

I. Grzegory

• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  
• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
  
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• GaN Homoepitaxy for Device Applications
  
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  
• Surface morphology of as grown and annealed bulk GaN crystals
  
• Mg Segregation, Difficulties of P-Doping in GaN
  

S. Gu

• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
  
• Structural Properties of Laterally Overgrown GaN
  
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
  

C. Guénaud

• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  

D. Guggi

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

L.J. Guido

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

J.-C. Guillaume

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  

Daniel A. Gulino

• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
  

R. L. Gunshor

• Growth of InN by MBE
  

H.J. Guo

• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  

K. Gurumurugan

• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  

Anders Gustafsson

• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  

R. Gutierrez

• Extended Defects in GaN: A Theoretical Study
  

J. Gutowski

• Studies on Carbon As Alternative p-Type Dopant for GaN
  

Index last updated Monday, February 10, 2003 4:39:06 PM.
© 2003 The Materials Research Society