MIJ-NSR Author Index, F

MIJ-NSR Author Index, F

Nikolai N Faleev

High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Zhaoqiang Fang

Electrical Measurements in GaN: Point Defects and Dislocations

Maziar Farahmand

Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

J. P. Faurie

Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

J. P. Faurie

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Fritz Fedler

Y. Fedyunin

A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates

R. M. Feenstra

M. Fehrer

Studies on Carbon As Alternative p-Type Dopant for GaN

Z. Feit

A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates

E. Feltin

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

Z. C. Feng

I. Ferguson

J.R.L. Fernandez

Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature

A. Ferreira da Silva

Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature

G. Feuillet

Jeffrey J. Figiel

Paul T. Fini

A.J. Fischer

Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells

P. Fischer

Roland A. Fischer

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

G. Fishman

Piezoelectric Properties of GaN Self-Organized Quantum Dots

L. Flannery

Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

K. Fleischer

Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN

J.G. Fleming

Microstructure of GaN Grown on (111) Si by MOCVD

C. Flierl

Focused Ion Beam Etching of GaN

Doru I Florescu

Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope

Jeff S Flynn

D.M. Follstaedt

Microstructure of GaN Grown on (111) Si by MOCVD

W.K. Fong

B.E. Foutz

Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

J.L. Fouviere

Piezoelectric Properties of GaN Self-Organized Quantum Dots

C. T. Foxon

S. Frabboni

Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

Sebastien Francoeur

High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

J. Frandon

Th. Frauenheim

E. Frayssinet

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Carlo Zanotti-Fregonara

Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire

R. Freitag

Current limitation after pinch-off in AlGaN/GaN FETs

F. Freudenberg

AlGaN-Based Bragg Reflectors

T. Frey

M. Fu

Rapid Thermal Processing of Implanted GaN Up To 1500°C

V. N. Fuflyigin

Integration of PLZT and BST Family Oxides with GaN

Shizuo Fujita

Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature

Shigeo Fujita

Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature

S. Fuke

Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire

Mitsuru Funato

Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature

Index last updated Monday, February 10, 2003 4:39:05 PM.
© 2003 The Materials Research Society