MIJ-NSR Author Index, E

MIJ-NSR Author Index, E

L.F. Eastman

E.J. Ebeling

GaN Homoepitaxy for Device Applications

K. J. Ebeling

Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
Determination of the dislocation densities in GaN on c-oriented sapphire
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
GaN based LED's with different recombination zones
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

F. Eberhard

GaN based LED's with different recombination zones

T. Ebner

Current limitation after pinch-off in AlGaN/GaN FETs

L. Eckey

C.R. Eddy, Jr.

Etch Processing of III-V Nitrides

J.H. Edgar

J.A. Edmond

N.V. Edwards

S. Einfeldt

A. Eisenbach

Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire

C. J. Eiting

M. Eizenberg

Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN

Said Elhamri

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

N. A. El-Masry

Chris R. Elsass

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

Joachim Elsner

Vyacheslav A. Elyukhin

High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Yasushi Enomoto

Optical Properties of AlGaN Quantum Well Structures

N. Esser

AlGaN-Based Bragg Reflectors

T. Eustis

A. Euteneuer

Transient four wave mixing experiments on GaN

S. Evtimova

Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'

G.J. Exarhos

Effects of Oxygen Ion Implantation in Gallium Nitride

Index last updated Monday, February 10, 2003 4:39:02 PM.
© 2003 The Materials Research Society