MIJ-NSR Author Index, D

A. M. Dabiran

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  

Ferdynand P. Dabkowski

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  

J. Dalfors

• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  

Stephane Dalmasso

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  

Gerard Dang

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• Growth and Device Performance of GaN Schottky Rectifiers
  
• Surface Conversion Effects in Plasma-Damaged p-GaN
  
• Processing And Device Performance Of GaN Power Rectifiers
  
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  

K.W. Dang

• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

JŸrgen DŠnhardt

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

V. Darakchieva

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  

M.F. DaSilva

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  

Bruno Daudin

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  
• Piezoelectric Properties of GaN Self-Organized Quantum Dots
  
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  

M. Dauelsberg

• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
  

Robert F Davis

• Photoluminescence Characterization of Mg Implanted GaN
  
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
  
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
  
• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  
• Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
  
• Advanced PENDEOEPITAXY(TM) of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
  
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
  
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  
• Characterization of Be-Implanted GaN Annealed At High Temperatures
  
• Pinholes, Dislocations and Strain Relaxation in InGaN
  
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  

V. Yu. Davydov

• Physical Properties of Bulk GaN Crystals Grown by HVPE
  
• Strain relaxation in GaN layers grown on porous GaN sublayers
  

Philippe Debray

• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

Manfred Deicher

• Photoluminescence Characterization of Mg Implanted GaN
  
• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
  

C. Delalande

• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  

E. Deleporte

• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  

Fabio Della Sala

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

F. Demangeot

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  
• Raman study of Ga_1-xAl_xN solid solutions
  
• Raman Determination of the Phonon Deformation Potentials in -GaN
  
• Thermal Stability of GaN Investigated by Raman Scattering
  

P Demeester

• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  
• Study of GaN films grown by metalorganic chemical vapour deposition
  
• MOVPE growth optimization of high quality InGaN films.
  

D. M. Demidov

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

P. de Mierry

• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  

S.P. DenBaars

• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
  
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
  
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  
• Spectroscopic Studies in InGaN Quantum Wells
  
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  
• Electron Beam Pumped MQW InGaN/GaN Laser
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
  

Jianyu Deng

• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
  

Theeradatch Detchprohm

• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  
• Gain Spectroscopy of HVPE-Grown GaN
  

R. P. Devaty

• Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
  

Anjana Devi

• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
  

M. A. C. Devillers

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  

D. J. Dewsnip

• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  

J. Diaz

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

Aldo Di Carlo

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

C.S. Dickens

• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
  

R. Dietrich

• Current limitation after pinch-off in AlGaN/GaN FETs
  

Marie Antoinette di Forte Poisson

• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
  

R. Dimitrov

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  

Alexey V. Dmitriev

• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  

V.A. Dmitriev

• Strain relaxation in GaN layers grown on porous GaN sublayers
  
• Physical Properties of Bulk GaN Crystals Grown by HVPE
  
• Fabrication of GaN mesa structures
  
• GaN Based p-n Structures Grown on SiC Substrates
  
• GaN p-n Structures Fabricated by Mg Ion Implantation
  
• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
  
• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
  
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
  
• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  

El Hadj Dogheche

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  

Jaroslaw Z Domagala

• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
  

Kay Domen

• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  

A. Dommann

• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
  
• Properties of InGaN deposited on Glass at Low Temperature
  

Rose M. Donaldson

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  

Z.J. Dong

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  

S.M. Donovan

• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Photoelectrochemical Etching of In_xGa_1-xN
  

W. Alan Doolittle

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  

D. Doppalapudi

• Generation Recombination Noise in GaN Photoconductors
  

R. Doradzinski

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  

A. Dörnen

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

W. Dorsch

• Pinholes, Dislocations and Strain Relaxation in InGaN
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  

B. Doshi

• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  

K. Dovidenko

• Study of Thin Films Polarity of Group III Nitrides
  
• Crystal Structure and Defects in Nitrogen-Deficient GaN
  
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  

Andrew R. Drews

• Temperature Effect on the Quality of AlN Thin Films
  

A. L. Dudin

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

Jacques Dumont

• Metal/GaN Contacts Studied by Electron Spectroscopies
  

S.T. Dunham

• Simulation of a GaN Based Static Induction Transistor
  

Kathleen A Dunn

• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  

Clarence Dunnrowicz

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  

R. D. Dupuis

• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  
• Mg Segregation, Difficulties of P-Doping in GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  

R.D. Dupuis

• TEM Study of Defects in Laterally Overgrown GaN Layers
  

Mitra Dutta

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  

R. Dwilinski

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  
• Paramagnetic defects in GaN
  

Jeffrey S. Dyck

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

Index last updated Monday, February 10, 2003 4:39:00 PM.
© 2003 The Materials Research Society