MIJ-NSR Author Index, C

Meghan L. Caldwell

• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
  
• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
  

M. Callahan

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  
• High Quality Hydrothermal ZnO Crystals
  

F. Calle

• Yellow luminescence in Mg-doped GaN
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  

E. Calleja

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Yellow luminescence in Mg-doped GaN
  
• XPS study of Au/GaN and Pt/GaN contacts
  
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  

J. Camassel

• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  

R.P. Campion

• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  

X.A. Cao

• Surface Conversion Effects in Plasma-Damaged p-GaN
  

X.A. Cao

• Growth and Device Performance of GaN Schottky Rectifiers
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  
• Processing And Device Performance Of GaN Power Rectifiers
  

P. Capezzuto

• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
  

G. S. Cargill III

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  

E. Carlino

• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
  

W.E. Carlos

• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
  

E.P. Carlson

• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
  
• Photoluminescence Characterization of Mg Implanted GaN
  
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  
• Characterization of Be-Implanted GaN Annealed At High Temperatures
  

Carmine A Carosella

• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
  

J. C. Carrano

• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
  

C. Barry Carter

• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
  

A. N. Cartwright

• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  

Roland Caudano

• Metal/GaN Contacts Studied by Electron Spectroscopies
  
• XPS study of Au/GaN and Pt/GaN contacts
  

S. Chae

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

V. P. Chaly

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

Michael C.Y. Chan

• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
  

K.L. Chang

• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
  

Ping C. Chang

• Fabrication and Characterization of GaN Junction Field Effect Transistors
  

S. S. Chang

• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
  

Y. A. Chang

• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  

L.-L. Chao

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  

E. Chason

• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  

J. Chaudhuri

• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
  
• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  

A-B. Chen

• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
  

Huajie Chen

• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
  
• Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  
• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
  

K.L. Chen

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  

P. Chen

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
  

Q. Chen

• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  

C. H. Chen

• Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
  

W.-L. Chen

• Growth of InN by MBE
  

W. M. Chen

• Electronic Properties of Ga(In)NAs Alloys
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  
• Optical properties of electron-irradiated GaN
  

X. Chen

• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  

Y. Chen

• NiIn As An Ohomic Contact To p-GaN
  
• Focused Ion Beam Etching of GaN
  

Z. Chen

• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
  

Z. Z. Chen

• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
  

T.S Cheng

• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
  
• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  

A.Cherenkov

• Strain relaxation in GaN layers grown on porous GaN sublayers
  

Sauha Cheung

• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
  

G.-C. Chi

• Processing And Device Performance Of GaN Power Rectifiers
  
• Growth and Device Performance of GaN Schottky Rectifiers
  

S.F. Chichibu

• Spectroscopic Studies in InGaN Quantum Wells
  

James Chisholm

• Simulations of Defect-Interface Interactions in GaN
  

V.A. Chitta

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  

Shean-Yih Chiu

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  

H. Cho

• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  
• Properties and Effects of Hydrogen in GaN
  
• Processing And Device Performance Of GaN Power Rectifiers
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  

Hyung Koun Cho

• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
  
• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

J. Cho

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

S. Cho

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  

Yong-Hoon Cho

• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
  
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  

Ji Youn Choi

• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

Sung Chul Choi

• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
  

D.A. Choutov

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  

P. P. Chow

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
  

W.W. Chow

• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  

W. J. Choyke

• Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
  

J. Christen

• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
  
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
  
• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  
• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  

N. E. Christensen

• Native defects and carbon impurity in cubic BN
  
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  

S. Christiansen

• Pinholes, Dislocations and Strain Relaxation in InGaN
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  

T. Christmann

• Optical Investigations of AlGaN on GaN Epitaxial Films
  

M.B. Christopher

• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
  

D.G. Chtchekine

• Temperature Dependence of Bound Exciton Emissions in GaN
  

George Chu

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

K. Chu

• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  
• Research on GaN MODFET's
  
• High Frequency AlGaN/GaN MODFET's
  

S. N. G. Chu

• Growth and Device Performance of GaN Schottky Rectifiers
  
• Processing And Device Performance Of GaN Power Rectifiers
  

S.J. Chua

• Temperature Dependence of Bound Exciton Emissions in GaN
  
• Activation of Beryllium-Implanted GaN by Two-Step Annealing
  
• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
  

R.W. Chuang

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  

C.-C. Chuo

• Processing And Device Performance Of GaN Power Rectifiers
  
• Growth and Device Performance of GaN Schottky Rectifiers
  

Jen-Inn Chyi

• Growth and Device Performance of GaN Schottky Rectifiers
  
• Properties and Effects of Hydrogen in GaN
  
• Processing And Device Performance Of GaN Power Rectifiers
  

Irving Chyr

• Focused Ion Beam Micromachining of GaN Photonic Devices
  

R. Cingolani

• Material Properties of GaN in the Context of Electronic Devices
  
• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  
• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

S. Ruffenach-Clur

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  
• Raman study of Ga_1-xAl_xN solid solutions
  
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  

Philip I. Cohen

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  

Christopher W. Coldren

• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
  

Larry A. Coldren

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Electron Beam Pumped MQW InGaN/GaN Laser
  
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  

M.W. Cole

• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  

J.J. Coleman

• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
  
• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  

G. Coli

• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
  

Michael E. Coltrin

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  

L. Considine

• MOVPE growth optimization of high quality InGaN films.
  

J.W. Cook, Jr.

• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  
• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  

J.W. Cook,Jr

• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  

Holger Cordes

• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  

Carol Trager-Cowan

• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
  
• Properties of GaN epilayers grown on misoriented sapphire substrates
  
• The Morphology and Cathodoluminescence of GaN Thin Films
  

Rachel Crane

• Highly Chemical Reactive Ion Etching of Gallium Nitride
  

Michael D. Craven

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  

Devin Crawford

• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  

Mary H. Crawford

• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
  
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  
• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
  

J. A. Crawley

• MOVPE growth optimization of high quality InGaN films.
  
• Study of GaN films grown by metalorganic chemical vapour deposition
  

J. Randall Creighton

• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  

A. Cros

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  

J. Cui

• Preparation of Sapphire for High Quality III-Nitride Growth
  

J.C. Culbertson

• Enhanced GaN Decomposition At MOVPE Pressures
  

F. Cusso

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  

D. Cyr

• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  

Index last updated Monday, February 10, 2003 4:38:58 PM.
© 2003 The Materials Research Society