MIJ-NSR Author Index, B

Alexandr I. Babanin

• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
  
• Physical Properties of Bulk GaN Crystals Grown by HVPE
  
• Fabrication of GaN mesa structures
  

S.E. Babcock

• Structure of MOVPE Deposited AlN on Si(111)
  
• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
  

A. G. Baca

• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Fabrication and Characterization of GaN Junction Field Effect Transistors
  
• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
  
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
  

K-H. Bachem

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  

In-Tae Bae

• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
  

J. Bailey

• High Quality Hydrothermal ZnO Crystals
  
• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  

Cengiz Balkas

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  

Michael Banas

• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
  
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
  
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
  

P. G. Baranov

• Current status of GaN crystal growth by sublimation sandwich technique
  

J. Baranowski

• Surface morphology of as grown and annealed bulk GaN crystals
  
• High quality GaN films - growth and properties
  
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  

John C Barbour

• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
  

A. Barcz

• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
  
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  

Richard J. Barrett

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  

Serge Barriere

• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
  

A. Barski

• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  
• Epitaxial growth of cubic GaN and AlN on Si(001)
  

J. Bartels

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  

Michael E. Bartram

• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
  
• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
  
• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
  

D. Basak

• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Yellow luminescence in Mg-doped GaN
  

A. Baski

• Preparation of Sapphire for High Quality III-Nitride Growth
  

D. Batchelder

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  

A.D. Batchelor

• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  

K. Baynes

• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
  

R.A. Beach

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  
• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
  

B. Beaumont

• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
  
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  
• Yellow luminescence in Mg-doped GaN
  
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  
• Metal/GaN Contacts Studied by Electron Spectroscopies
  
• XPS study of Au/GaN and Pt/GaN contacts
  
• p-doping of GaN by MOVPE
  
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  
• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
  
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
  
• Alternative N precursors and Mg doped GaN grown by MOVPE
  
• Yellow Band and Deep levels in Undoped MOVPE GaN.
  
• Temperature behaviour of the yellow emission in GaN
  
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  
• Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  

R. Beccard

• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  

S. M. Bedair

• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  
• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
  

D. Behr

• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x0.15) Grown by Metal-Organic Chemical Vapor Deposition
  

Tilman Beierlein

• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
  
• Properties of InGaN deposited on Glass at Low Temperature
  

Brahim Belgacem

• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
  

Abigail Bell

• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
  

L. Bellaiche

• Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
  

E. Bellotti

• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  
• Monte Carlo Simulation of Hall Effect in n-Type GaN
  

Mourad Benamara

• Mg Segregation, Difficulties of P-Doping in GaN
  
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
  
• TEM Study of Defects in Laterally Overgrown GaN Layers
  

Hugo Bender

• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
  

A. Bensaoula

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

J. D. Benson

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  

M. Benyoucef

• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
  

B. Ya Ber

• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  

M.A. Berding

• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
  

Antoine Bere

• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
  

J. P. Bergman

• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Free Excitons in GaN
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  

Leah Bergman

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  

I. Berichev

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  

G. W. Berkstresser

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

Frank Bertram

• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  

M. Besson

• Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
  

I. Bhat

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
  

Sergiy Bidnyk

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
  
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
  
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
  
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
  

Pierre Bigenwald

• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  

S.C. Binari

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

R.H. Birkhahn

• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
  
• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  

U. Birkle

• Influence of Doping on the Lattice Dynamics GaN
  
• Studies on Carbon As Alternative p-Type Dopant for GaN
  

S.G. Bishop

• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
  
• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
  
• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
  

J.M. Blanco

• Yellow luminescence in Mg-doped GaN
  

M.N. Blashenkov

• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  

D. Bliss

• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  
• High Quality Hydrothermal ZnO Crystals
  

Alexander Blumenau

• Structural and Electronic Properties of Line Defects in GaN
  

M. Bockowski

• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
  

H. Bolay

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

Marek P. Boleslawski

• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
  
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
  

J. Boney

• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  

Annalisa Bonfiglio

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  

B. A. Borisov

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

A. Botcharev

• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
  

Andrei Botchkarev

• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
  
• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
  

T. Bottcher

• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
  

T. Boufaden

• Alternative N precursors and Mg doped GaN grown by MOVPE
  

V. Bougrov

• Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  

A. Bouillé

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  

David P. Bour

• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
  
• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
  
• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  

L.O. Bouthillette

• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
  
• High Quality Hydrothermal ZnO Crystals
  

Karim S. Boutros

• Current limitation after pinch-off in AlGaN/GaN FETs
  
• Fabrication of Smooth GaN-Based Laser Facets
  

C. Bozdog

• Spectroscopy of Proton Implanted GaN
  

B.J. Bozlee

• Effects of Oxygen Ion Implantation in Gallium Nitride
  

C. D. Brandle

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

D.N. Braski

• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
  

M. Bremser

• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
  
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  

I. Brener

• Growth of Ga-face and N-face GaN films using ZnO Substrates
  
• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  
• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  

Kevin Brennan

• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
  
• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
  
• Monte Carlo Simulation of Hall Effect in n-Type GaN
  

P.M. Bridger

• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
  

Leonard J. Brillson

• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
  

Olivier Briot

• Raman study of Ga_1-xAl_xN solid solutions
  
• Optical nonlinearities of Gallium Nitride
  
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  
• Thermal Stability of GaN Investigated by Raman Scattering
  
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  
• Raman Determination of the Phonon Deformation Potentials in -GaN
  
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  

Paul D Bristowe

• Simulations of Defect-Interface Interactions in GaN
  

I. Broser

• Mechanisms of Optical Gain in Cubic GaN and InGaN
  
• Gain Spectroscopy of HVPE-Grown GaN
  
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  

April S. Brown

• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
  

I. Brown

• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
  

J. D. Brown

• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
  

J.D. Brown

• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
  
• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  
• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
  
• Solar-Blind AlGaN Heterostructure Photodiodes
  
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
  

J. L. Brown

• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
  

P. D. Brown

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  

D. Brunner

• AlGaN-Based Bragg Reflectors
  
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

G. Bruno

• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
  

D. N. E. Buchanan

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
  
• Epitaxial Growth and Orientation of GaN on (1 0 0) -LiAlO2
  
• Growth of Ga-face and N-face GaN films using ZnO Substrates
  
• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  
• Nucleation of AlN on the (7x7) Reconstructed Silicon (1 1 1) Surface
  

H. J. Buehlmann

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  

Hans-Jörg Bühlmann

• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
  

Gary E. Bulman

• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
  

G. Bulman

• Dry and Wet Etching for Group III-Nitrides
  

Gabriela E. Bunea

• Simulation of a GaN Based Static Induction Transistor
  

W. Burkhardt

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

J. Burm

• Research on GaN MODFET's
  

J. Busch

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

I. A. Buyanova

• Optical properties of electron-irradiated GaN
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  
• Free Excitons in GaN
  
• Electronic Properties of Ga(In)NAs Alloys
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  

A. N. Buzynin

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
  

Yu. N. Buzynin

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
  

A.D. Bykhovski

• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
  

Index last updated Monday, February 10, 2003 4:38:54 PM.
© 2003 The Materials Research Society