MIJ-NSR Author Index, A

Amber C. Abare

• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
  
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
  
• Electron Beam Pumped MQW InGaN/GaN Laser
  

C.R. Abernathy

• Luminescence From Erbium-Doped Gallium Nitride Thin Films
  
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
  
• Photoelectrochemical Etching of In_xGa_1-xN
  
• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  
• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
  
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
  
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
  
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
  
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
  
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
  
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
  

Eduardo Abramof

• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  

Christoph Adelmann

• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
  

Jochen Aderhold

• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
  

I. Adesida

• Dry and Wet Etching for Group III-Nitrides
  
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
  

F. Adler

• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

J.W. Ager III

• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
  

M. Aguilar

• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  

Mikko H. Ahonen

• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
  

M. Ainoya

• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  

M. Aizcorbe

• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  

I. Akasaki

• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  
• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  
• Free Excitons in GaN
  
• Transient four wave mixing experiments on GaN
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  
• Research on GaN MODFET's
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
  
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  
• Mass Transport, Faceting and Behavior of Dislocations in GaN
  
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  
• Optical properties of electron-irradiated GaN
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  

Igor Aksenov

• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
  

J.D. Albrecht

• Monte Carlo Simulation of Hall Effect in n-Type GaN
  
• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
  
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

M. Albrecht

• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
  
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  
• Pinholes, Dislocations and Strain Relaxation in InGaN
  
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  
• Determination of the dislocation densities in GaN on c-oriented sapphire
  

A. N. Alexeev

• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  

Dimitri Alexson

• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
  

J. Allègre

• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
  
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
  

G.C. Allen

• Focused Ion Beam Etching of GaN
  

E. Alves

• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
  

H. Amano

• Optical properties of electron-irradiated GaN
  
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
  
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
  
• Transient four wave mixing experiments on GaN
  
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
  
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
  
• Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
  
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
  
• Free Excitons in GaN
  
• Research on GaN MODFET's
  
• Mass Transport, Faceting and Behavior of Dislocations in GaN
  
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  
• Optical Investigations of AlGaN on GaN Epitaxial Films
  
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
  
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  
• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
  
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
  

O. Ambacher

• AlGaN-Based Bragg Reflectors
  
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
  
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  
• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
  
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  

K. Ikossi-Anastasiou

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  

M.G. Ancona

• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
  
• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
  

Wayne A Anderson

• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
  

Thorvald G Andersson

• The Effect of Al in Plasma-Assisted MBE-Grown GaN
  

T.G. Andersson

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  
• Optical Properties of GaNAs Grown by MBE
  
• Surface Morphology and Structure of GaN_xAs_1-x
  

A. V. Andranov

• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  

Andre Andre

• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
  

R. Andre

• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
  

A.D. Andreev

• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
  

H. Angerer

• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
  
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  
• AlGaN-Based Bragg Reflectors
  

Vladimir G. Antipov

• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
  

A.F.M. Anwar

• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
  
• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
  

Y. Aoyagi

• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
  
• Optical Properties of AlGaN Quantum Well Structures
  
• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
  
• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
  
• Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
  

Yasuhiko Arakawa

• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
  

Alberto Argoitia

• Growth of Oriented Thick Films of Gallium Nitride From the Melt
  

M. Arlery

• Epitaxial growth of cubic GaN and AlN on Si(001)
  
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  

Nicola Armani

• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
  

B. Arnaudov

• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
  

G. Arunmozhi

• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
  

M. Arzberger

• AlGaN-Based Bragg Reflectors
  

D.J. As

• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
  
• Mechanisms of Optical Gain in Cubic GaN and InGaN
  
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
  
• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
  
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
  

P. Asbeck

• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
  

Waeil M. Ashmawi

• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
  

V A Asnin

• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
  

D. E. Aspnes

• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
  

Keunho Auh

• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  

Roger-Louis Aulombard

• Optical nonlinearities of Gallium Nitride
  
• Raman Determination of the Phonon Deformation Potentials in -GaN
  
• Raman study of Ga_1-xAl_xN solid solutions
  
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
  

M. E. Aumer

• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  

Gregory W. Auner

• Temperature Effect on the Quality of AlN Thin Films
  
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  

F.D. Auret

• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
  
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
  

R. Averbeck

• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  

Robert Averbeck

• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
  

M. V. Averyanova

• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  

Index last updated Monday, February 10, 2003 4:38:52 PM.
© 2003 The Materials Research Society