The 3rd European GaN Workshop (EGW-3) was held in Jadwisin, Poland 22-24 June 1998. EGW-3 was the third in a series which started in 1996 at Rigi, Switzerland and was continued at Valbonne, France, 1997. EGW-3 was organized by the High Pressure Research Center Unipress of Polish Academy of Sciences with the great assistance of the European Organizing Committee.
It seems to be obvious that the last few years represent a period of very fast progress in both basic research and device oriented applications of III-V nitrides. The commercialization of blue light emitting diodes and the demonstration of blue lasers based on InGaN/GaN multi quantum wells, as well as an increase in the amount of understanding of the basic physics, the role of defects and the built-in strains represent the main achievements of the last few years. It is the result of many efforts undertaken by a wide community of researchers and engineers from universities and high-tech companies.
EGW-3 gathered 150 participants from Europe, USA, Canada and Japan. Attendees heard 10 invited lectures and 55 contributed talks. They also participated in Poster and Rump Sessions on Nitride based devices. In total 97 works were presented during the two and a half day long Workshop.
Based on the success of the Third European GaN Workshop, the Organizing Committee selected Professors John Orton and Tom Foxon of Nottingham University to organize the next European GaN Workshop in 2000. In 1999 the Third International Conference on Nitride Semiconductors (ICNS'99) will be held in Europe (Montpellier, France). It will give the opportunity to the European Nitride Community for continuation of successful collaboration in the field of GaN research.
