A

Keywords: GaN

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

adatom

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

AlGaN

• Schottky Diodes on MOCVD Grown AlGaN Films.
  A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

B

buffer layer

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

bulk crystal

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

Bulk crystals

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  Jolanta Prywer, S. Krukowski.

C

c-BN

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

C-V

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

critical

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

Crystal morphology

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  Jolanta Prywer, S. Krukowski.

cubic boron nitride

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

cubic phase

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

D

deep centers

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

defects

• Polarization and band offsets of stacking faults in AlN and GaN
  J. A. Majewski, P. Vogl.

• Optical properties of electron-irradiated GaN
  I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

defects filtering

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

degradation

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

diffractometry

• Macro- and microstrains in MOCVD-grown GaN
  A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

diffusion

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

dislocations

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

doping.

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.

E

electron-irradiation

• Optical properties of electron-irradiated GaN
  I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.

ELOG

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

epitaxy

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

EPVOM

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

ESR

• Paramagnetic defects in GaN
  M. Palczewska, B. Suchanek, R. Dwilinski, K. Pakula, A. Wagner, M. Kaminska.

G

gallium nitride

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

• Polarization and band offsets of stacking faults in AlN and GaN
  J. A. Majewski, P. Vogl.

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
  Jolanta Prywer, S. Krukowski.

gallium nitrides

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

GaN

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

• The role of piezoelectric fields in GaN-based quantum wells
  Andreas Hangleiter , Jin Seo Im, H. Kollmer, S. Heppel, J. Off, Ferdinand Scholz.

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  A. R. A. Zauner, M. A. C. Devillers, P. R. Hageman, P. K. Larsen, S. Porowski.

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .

• High quality GaN films - growth and properties
  K. Pakula, Jacek M. Baranowski , M. Leszczynski, B. Suchanek, M. Wojdak.

• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  K. Pakula, M. Wojdak, M. Palczewska, B. Suchanek, Jacek M. Baranowski .

• Paramagnetic defects in GaN
  M. Palczewska, B. Suchanek, R. Dwilinski, K. Pakula, A. Wagner, M. Kaminska.

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.

GaN pyramids

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

GaN, MOCVD, capillary epitaxy

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
  A. N. Buzynin, V. V. Osiko, Yu. N. Buzynin, B. Pushnyi.

GaN, Molecular Beam Epitaxy

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  M. A. Sánchez-García, F. J. Sánchez, F. B. Naranjo, F. Calle, E. Calleja, E. Muñoz, U. Jahn, K. H. Ploog.

group III-nitrides

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

growth

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

H

heterostructures

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

HVPE

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .

hydride vapor phase epitaxy

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

I

III-V

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

imaging

• Properties of GaN epilayers grown on misoriented sapphire substrates
  Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.

impurities

• Native defects and carbon impurity in cubic BN
  I. Gorczyca, A. Svane, N. E. Christensen.

InGaAlN

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

InGaN

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

L

lasing

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

lateral

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

lateral overgrowth

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

LED

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

LEDs

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

light-emitting diodes

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

localized epitaxy

• Localized Epitaxy of GaN by HVPE on patterned Substrates
  O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS .

losses

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

luminescence

• Properties of GaN epilayers grown on misoriented sapphire substrates
  Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.

• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  K. Pakula, M. Wojdak, M. Palczewska, B. Suchanek, Jacek M. Baranowski .

luminescence.

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

M

Magnesium

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

magnetooptics

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

MBE

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, C. H. Molloy, D. J. Somerford, F. K. Koschnick, K. Michael, J.-M. Spaeth.

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

measurements

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

Mg doping

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  F. Calle, E. Monroy, F. J. Sánchez, E. Muñoz, B. Beaumont, S. Haffouz, M. Leroux, Pierre Gibart .

microdistortion dislocations

• Macro- and microstrains in MOCVD-grown GaN
  A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

miscibility gap

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

MOCVD

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

• Heterostructure for UV LEDs Based on Thick AlGaN Layers
  A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov.

modeling

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

molecular beam epitaxy

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, M. Skowronski.

morphology

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

MOVPE

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

multiwafer

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

N

nitride lasers

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

nitrides and luminescence.

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

O

optical

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

optical properties

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
  A. R. A. Zauner, M. A. C. Devillers, P. R. Hageman, P. K. Larsen, S. Porowski.

overgrowth

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart .

P

Peierls force

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

phase separation

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
  T. Matsuoka.

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

photodetectors.

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

photoluminescence

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

• Optical properties of electron-irradiated GaN
  I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki.

piezoelectric effects

• The role of piezoelectric fields in GaN-based quantum wells
  Andreas Hangleiter , Jin Seo Im, H. Kollmer, S. Heppel, J. Off, Ferdinand Scholz.

pinholes

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

planetary

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

Q

quantum wells

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
  F. Manyakhin, A. Kovalev, A. E. Yunovich.

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin.

R

Raman scattering

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.

recoiled ions.

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

reconstructions

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, M. Skowronski.

resonance

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.

S

sapphire substrate

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

Schottky

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
  E. Monroy, F. Calle, E. Muñoz, F. Omnes, B. Beaumont, Pierre Gibart , J. A. Muñoz, F. Cusso.

Schottky diodes

• Schottky Diodes on MOCVD Grown AlGaN Films.
  A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

selective area

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

shallow donors

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  A. M. Witowski, M. L. Sadowski, K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski , M. Potemski, G. Martinez, P. Wyder.

Silicium

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  S. Haffouz, B. Beaumont, Pierre Gibart .

solid solutions

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
  F. Demangeot, J. Frandon, M. A. Renucci, H. Sands, D. Batchelder, S. Ruffenach-Clur, Olivier Briot, Bernard Gil.

stacking faults

• Polarization and band offsets of stacking faults in AlN and GaN
  J. A. Majewski, P. Vogl.

stimulated emission

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

strain effect

• Suppression of phase separation in InGaN due to elastic strain
  S. Yu. Karpov.

strain relaxation

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

sublimation

• Current status of GaN crystal growth by sublimation sandwich technique
  P. G. Baranov, E. N. Mokhov, A. O. Ostroumov, M. G. Ramm, M. S. Ramm, V. V. Ratnikov, A. D. Roenkov, Yu. A. Vodakov, A. A. Wolfson, G. V. Saparin, S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, Holger Juergensen.

substrates

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
  Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas.

• Properties of GaN epilayers grown on misoriented sapphire substrates
  Carol Trager-Cowan , S. McArthur, P. G. Middleton, K. P. O'Donnell, D. Zubia, S. D. Hersee.

surface damage

• Schottky Diodes on MOCVD Grown AlGaN Films.
  A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing.

surface morphology

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  M. Godlewski, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski.

surface reconstruction

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  O. Zsebök, J.V. Thordson, T.G. Andersson.

surface structures

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

surfactants

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle .

T

ternary

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
  O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser.

thickness

• Pinholes, Dislocations and Strain Relaxation in InGaN
  B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, Robert F. Davis.

threshold analysis

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

time of flight mass spectroscopy of

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  E. Kim, I. Berichev, A. Bensaoula, A. Schultz, K. Waters, W. Zagozdzon-Wosik.

V

VCSELs

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  Pawel Mackowiak, Wlodzimierz Nakwaski.

X

X-ray diffractometry

• Macro- and microstrains in MOCVD-grown GaN
  A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov.

X-ray measurements

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala.

Preface Acknowledgments Organization Contents Author Index Keywords EGW Home

 

Proceedings of the Third European Gallium Nitride Workshop