A

• Optical properties of electron-irradiated GaN

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Optical properties of electron-irradiated GaN

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

B

• Current status of GaN crystal growth by sublimation sandwich technique

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
• High quality GaN films - growth and properties
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Localized Epitaxy of GaN by HVPE on patterned Substrates

• Optical properties of electron-irradiated GaN

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

C

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Optical properties of electron-irradiated GaN

• Native defects and carbon impurity in cubic BN

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Properties of GaN epilayers grown on misoriented sapphire substrates

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

D

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Paramagnetic defects in GaN
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

F

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

G

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

• Native defects and carbon impurity in cubic BN

• Schottky Diodes on MOCVD Grown AlGaN Films.

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
• Schottky Diodes on MOCVD Grown AlGaN Films.

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

H

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

• The role of piezoelectric fields in GaN-based quantum wells

• Pinholes, Dislocations and Strain Relaxation in InGaN

• The role of piezoelectric fields in GaN-based quantum wells

• Properties of GaN epilayers grown on misoriented sapphire substrates

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors

I

• Localized Epitaxy of GaN by HVPE on patterned Substrates

• The role of piezoelectric fields in GaN-based quantum wells

J

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Current status of GaN crystal growth by sublimation sandwich technique
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors

K

• Paramagnetic defects in GaN
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

• Current status of GaN crystal growth by sublimation sandwich technique
• Suppression of phase separation in InGaN due to elastic strain

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• The role of piezoelectric fields in GaN-based quantum wells

• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

• Macro- and microstrains in MOCVD-grown GaN

L

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

• High quality GaN films - growth and properties
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Optical properties of electron-irradiated GaN

• Macro- and microstrains in MOCVD-grown GaN
• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

M

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

• Polarization and band offsets of stacking faults in AlN and GaN

• Current status of GaN crystal growth by sublimation sandwich technique

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• Phase Separation in wurtzite In_1-x-yGa_xAl_yN

• Properties of GaN epilayers grown on misoriented sapphire substrates

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Properties of GaN epilayers grown on misoriented sapphire substrates

• Current status of GaN crystal growth by sublimation sandwich technique

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Optical properties of electron-irradiated GaN
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

N

• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

O

• Properties of GaN epilayers grown on misoriented sapphire substrates

• The role of piezoelectric fields in GaN-based quantum wells

• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

• Current status of GaN crystal growth by sublimation sandwich technique

P

• Paramagnetic defects in GaN
• High quality GaN films - growth and properties
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• Paramagnetic defects in GaN
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• Localized Epitaxy of GaN by HVPE on patterned Substrates

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Schottky Diodes on MOCVD Grown AlGaN Films.

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Macro- and microstrains in MOCVD-grown GaN
• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

R

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Current status of GaN crystal growth by sublimation sandwich technique

• Current status of GaN crystal growth by sublimation sandwich technique

• Macro- and microstrains in MOCVD-grown GaN

• Current status of GaN crystal growth by sublimation sandwich technique

• Schottky Diodes on MOCVD Grown AlGaN Films.

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Current status of GaN crystal growth by sublimation sandwich technique

S

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Raman study of resonance effects in Ga_1-xAl_xN solid solutions

• Current status of GaN crystal growth by sublimation sandwich technique

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

• Macro- and microstrains in MOCVD-grown GaN

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors

• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors

• The role of piezoelectric fields in GaN-based quantum wells

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
• Schottky Diodes on MOCVD Grown AlGaN Films.

• Macro- and microstrains in MOCVD-grown GaN

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
• Schottky Diodes on MOCVD Grown AlGaN Films.

• Schottky Diodes on MOCVD Grown AlGaN Films.

• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• Pinholes, Dislocations and Strain Relaxation in InGaN

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• Paramagnetic defects in GaN
• High quality GaN films - growth and properties

• Native defects and carbon impurity in cubic BN

T

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

U

• Heterostructure for UV LEDs Based on Thick AlGaN Layers

• Macro- and microstrains in MOCVD-grown GaN
• Heterostructure for UV LEDs Based on Thick AlGaN Layers

V

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

• Current status of GaN crystal growth by sublimation sandwich technique

• Polarization and band offsets of stacking faults in AlN and GaN

W

• Paramagnetic defects in GaN

• Optical properties of electron-irradiated GaN

• Localized Epitaxy of GaN by HVPE on patterned Substrates

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• High quality GaN films - growth and properties

• Current status of GaN crystal growth by sublimation sandwich technique

• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

• AMMONO method of BN, AlN and GaN synthesis and crystal growth.

Y

• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Z

• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

• Current status of GaN crystal growth by sublimation sandwich technique

• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

• Properties of GaN epilayers grown on misoriented sapphire substrates

• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

Preface Acknowledgments Organization Contents Author Index Keywords EGW Home

 

Proceedings of the Third European Gallium Nitride Workshop