Proceedings of the Third European GaN Workshop

Dopants and Defects

Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

F. J. Sánchez , F. Calle , M.A. Sanchez-Garcia , E. Calleja , E. Muñoz , C. H. Molloy , D. J. Somerford , F. K. Koschnick , K. Michael and J.-M. Spaeth

Paramagnetic defects in GaN

M. Palczewska , B. Suchanek , R. Dwilifski , K. Pakua , A. Wagner and M. Kamifska

Luminescence and ESR Spectra of GaN:Si below and above Mott Transition

K. Pakua , M. Wojdak , M. Palczewska , B. Suchanek and Jacek M. Baranowski

Native defects and carbon impurity in cubic BN

I. Gorczyca , A. Svane and N. E. Christensen

Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

A. M. Witowski , M. L. Sadowski , K. Pakua , B. Suchanek , R. Stepniewski , Jacek M. Baranowski , M. Potemski , G. Martinez and P. Wyder

Growth

Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

M. A. Sánchez-García , F. J. Sánchez , F. B. Naranjo , F. Calle , E. Calleja , E. Muñoz , U. Jahn and K. H. Ploog

Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

J. Kozlowski , R. Paszkiewicz , R. Korbutowicz , M. Panek , B. Paszkiewicz and M. Tlaczala

Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

A. N. Buzynin , V. V. Osiko , Yu. N. Buzynin and B. Pushnyi

Properties of GaN epilayers grown on misoriented sapphire substrates

Carol Trager-Cowan , S. McArthur , P. G. Middleton , K. P. O'Donnell , D. Zubia and S. D. Hersee

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

S. Haffouz , B. Beaumont and Pierre Gibart

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Pawe Maçkowiak and Wodzimierz Nakwaski

Localized Epitaxy of GaN by HVPE on patterned Substrates

O. Parillaud , V. Wagner , H. J. Buehlmann and Marc ILEGEMS

Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

Raj Singh , Richard J. Barrett , John J. Gomes , Ferdynand P. Dabkowski and T.D. Moustakas

AMMONO method of BN, AlN and GaN synthesis and crystal growth.

R. Dwilifski , R. Doradzifski , J. Garczyfski , L. Sierzputowski , M. Palczewska , Andrzej Wysmolek and M. Kamifska

Current status of GaN crystal growth by sublimation sandwich technique

P. G. Baranov , E. N. Mokhov , A. O. Ostroumov , M. G. Ramm , M. S. Ramm , V. V. Ratnikov , A. D. Roenkov , Yu. A. Vodakov , A. A. Wolfson , G. V. Saparin , S. Yu. Karpov , D. V. Zimina , Yu. N. Makarov and Holger Juergensen

GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen

Jolanta Prywer and S. Krukowski

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz and Pierre Gibart

Properties and Characterization

High quality GaN films - growth and properties

K. Pakua , Jacek M. Baranowski , M. Leszczyfski , B. Suchanek and M. Wojdak

Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals

A. R. A. Zauner , M. A. C. Devillers , P. R. Hageman , P. K. Larsen and S. Porowski

GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors

O. Schoen , D. Schmitz , M. Heuken , Holger Juergensen and M. D. Bremser

Optoelectronic devices

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Pawe Maçkowiak and Wodzimierz Nakwaski

Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

F. Calle , E. Monroy , F. J. Sánchez , E. Muñoz , B. Beaumont , S. Haffouz , M. Leroux and Pierre Gibart

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

A. E. Yunovich , V. E. Kudryashov , A. N. Turkin , A. Kovalev and F. Manyakhin

Heterostructure for UV LEDs Based on Thick AlGaN Layers

A. V. Sakharov , W. V. Lundin , A. Usikov , U. I. Ushakov , Yu A. Kudriavtsev , A.V. Lunev , Y.M. Sherniakov and N.N. Ledentsov

Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

F. Manyakhin , A. Kovalev and A. E. Yunovich

Stress and local structural properties

The role of piezoelectric fields in GaN-based quantum wells

Andreas Hangleiter , Jin Seo Im , H. Kollmer , S. Heppel , J. Off and Ferdinand Scholz

Polarization and band offsets of stacking faults in AlN and GaN

J. A. Majewski and P. Vogl

X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

R. Langer , J Simon , O. Konovalov , N. Pelekanos , A. Barski and M. Leszczy f ski

Macro- and microstrains in MOCVD-grown GaN

A. Usikov , V.V. Ratnikov , R. Kyutt , W. V. Lundin , B. Pushnyi , N. M. Shmidt and M.P. Scheglov

Pinholes, Dislocations and Strain Relaxation in InGaN

B. Jahnen , M. Albrecht , W. Dorsch , S. Christiansen , H. P. Strunk , D. Hanser and Robert F. Davis

Surface properties

Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

T. Zywietz , Jörg Neugebauer , M. Scheffler , J. Northrup and Chris G. Van de Walle

Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

A. R. Smith , V. Ramachandran , R. M. Feenstra , D. W. Greve , A. Ptak , T. Myers , W. Sarney , L. Salamanca-Riba , M. Shin and M. Skowronski

Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

E. Kim , I. Berichev , A. Bensaoula , A. Schultz , K. Waters and W. Zagozdzon-Wosik

Organization

Author Index

Keyword Index

EGW-3 Proceedings

The Third European GaN Workshop

held June 22 - 24 June 1998, Jadwisin, Poland

Table of Contents

Dopants and Defects

Electronic Devices

Growth

Properties and Characterization

Optoelectronic devices

Physical Properties

Stress and local structural properties

Growth Related Structural Properties

Surface properties