The First European GaN Workshop was held in the Swiss Alp village of Rigi-Kaltbad on June 2-4, 1996. EGW-1 reflected the great current excitement in the field of nitride semiconductors in so far that attendance far exceeded the organizers' plans and a large number of companies elected to exhibit. The Workshop attracted participants from around the world, and permitted European nitride researchers a first opportunity to gather and discuss their work in a European setting dedicated to GaN-based materials. Foggy weather, which severely limited visibility throughout the workshop, kept attendees focussed on the matters at hand.
The two day workshop consisted of seven technical sessions, each approximately 90 minutes in duration. In total, the 140 workshop attendees heard and presented 64 contributed and 3 invited talks over two days. Contributed talks were strictly limited to seven minutes apiece, while the invited talks covered 30 minutes each. After a group of talks on a particular subject, the presenting authors formed an expert panel for a question/answer and open discussion period moderated by the session chair. In addition to the formal program, a cocktail reception on the first evening and a rump session on the second evening rounded out the three day schedule.
Based on the success of the First European GaN Workshop, the Organizing Committee selected Profs. Jean-Pierre Faurie and Pierre Gibart of CNRS-Valbonne to organize EGW-2 in June 1997. It is with much enthusiasm that we look forward to the continuation of the EGW series this year in the South of France.
Toby Strite
January 1997
updated February 20, 1997 .
© 1997 The Materials Research Society