EGW-1 Technical Papers

• Part I: Processing and Bulk Crystal Growth
• Part II: Structural Characterization
• Part III: Theory
• Part IV: Optical Characterization
• Part V: MOVPE Growth
• Part VI: MBE Growth
• Part VII: Devices

*Invited Papers

Part I: Processing and Bulk Crystal Growth

• *" Recent Results in the Crystal Growth of GaN at High N₂ Pressure", I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski
• " Temperature Distribution in the Chamber used for Crystal Growth of GaN under High Pressure of Nitrogen", S. Krukowski
• " Metal Contacts on -GaN", T. U. Kampen, W. Mönch
• " Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure", A. Pelzmann, S. Strite, A. Dommann, C. Kirchner, Markus Kamp , K. J. Ebeling, A. Nazzal
• " Fabrication of GaN Mesa Structures", K. V. Vassilevski, M. G. Rastegaeva, A. I. Babanin, I. P. Nikitina, V. A. Dmitriev
• " ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures", Bedwyr Humphreys, Matthew Govett

Part II: Structural Characterization

• " Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN", U. Strauss, H. Tews, H. Riechert, R. Averbeck, M. Schienle, B. Jobst, D. Volm, T. Streibl, B. K. Meyer, W. W. Rühle
• " Surface Morphology of As Grown and Annealed Bulk GaN Crystals", G. Nowak, S. Krukowski, I. Grzegory, S. Porowski, J. Baranowski, K. Pakula, J. Zak
• " In-depth Analysis of the Impurities in GaN", A. P. Kovarsky, V. S. Strykanov
• " Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates", S. Christiansen, M. Albrecht, W. Dorsch, H. P. Strunk, C. Zanotti-Fregonara, G. Salviati, A. Pelzmann, M. Mayer, Markus Kamp , K. J. Ebeling
• " Determination of the dislocation densities in GaN on c-oriented sapphire", A. Pelzmann, M. Mayer, C. Kirchner, D. Sowada, T. Rotter, Markus Kamp , K.-J. Ebeling, S. Christiansen, M. Albrecht, H. P. Strunk, B. Holländer, S. Mantl

Part III: Theory

• " Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals", E. V. Kalashnikov, V. I. Nikolaev
• " The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys", Alexey V. Dmitriev, Alexander L. Oruzheinikov
• " Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN", L. Bellaiche, K. Kunc, M. Besson
• " Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN", J. A. Majewski, M. Städele, P. Vogl

Part IV: Optical Characterization

• " Gain Spectroscopy of HVPE-Grown GaN", L. Eckey, J.-Chr. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu
• " Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells", Jin Seo Im, Volker Härle, Ferdinand Scholz, Andreas Hangleiter
• " Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE", M. Leroux, B. Beaumont, N. Grandjean, Pierre Gibart, J. Massies, J. P. Faurie
• " Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN", F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, Pierre Gibart
• " Yellow Band and Deep levels in Undoped MOVPE GaN", Fernando J. Sanchez, D. Basak, M. A. Sanchez-Garcì'a, E. Calleja, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, B. Beaumont, P. Lorenzini, P. Gibart, T. S. Cheng, C. T. Foxon, J. W. Orton
• " The Morphology and Cathodoluminescence of GaN Thin Films", C. Trager-Cowan, P. G. Middleton, K. P. O'Donnell
• " Free Excitons in GaN", B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, I. Akasaki
• " Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy", H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, M. Bockowski, S. Krukowski, S. Porowski, M. Mayer, A. Pelzmann, Markus Kamp, K. J. Ebeling, G. Karczewski
• " Raman Determination of the Phonon Deformation Potentials in -GaN", F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil, Roger-Louis Aulombard
• " Evidence for Shallow Acceptor Levels in MBE Grown GaN", B. G. Ren, J. W. Orton, T. S. Cheng, D. J. Dewsnip, D. E. Lacklison, C. T. Foxon, C. H. Malloy, X. Chen

Part V: MOVPE Growth

• *" Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates", M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, Robert F. Davis
• " Study of GaN films grown by metalorganic chemical vapour deposition", W. Van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush
• " The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor", Alan G. Thompson , M. Schurman, Z. C. Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall
• " Alternative N precursors and Mg doped GaN grown by MOVPE", B. Beaumont, M. Vaille, P. Lorenzini, Pierre Gibart, T. Boufaden, B. el Jani
• " MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser", H. Jürgensen, D. Schmitz, G. Strauch, E. Woelk, M. Dauelsberg, L. Kadinski, Yu. N. Makarov
• " Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire", J. L. Rouvière, M. Arlery, R. Niebuhr, K. H. Bachem, Olivier Briot
• " High Resistivity Al_xGa_1-xN Layers Grown by MOCVD", A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, R. G. Wilson
• " GaN Layers Grown by HVPE on P-type 6H-SiC Substrates", A. E. Nikolaev, Yu. V. Melnik, M. N. Blashenkov, N. I. Kuznetsov, I. P. Nikitina, A. S. Zubrilov, D. V. Tsvetkov, V. I. Nikolaev, V. A. Dmitriev, V. A. Soloviev
• " Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire", E. L. Piner, F. G. McIntosh, J. C. Roberts, M. E. Aumer, V. A. Joshkin, S. M. Bedair, N. A. El-Masry

Part VI: MBE Growth

• " Epitaxial growth of cubic GaN and AlN on Si(001)", A. Barski, U. Rössner, J. L. Rouvière, M. Arlery
• " PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN", H. Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann
• " Growth Rate Reduction of GaN Due to Ga Surface Accumulation", Devin Crawford, Ruediger Held, A. M. Johnston, A. M. Dabiran, Philip I. Cohen
• " Growth and Doping of AlGaN Alloys by ECR-assisted MBE", D. Korakakis, H.M. Ng, M. Misra, W. Grieshaber, T.D. Moustakas
• " Growth of Ga-face and N-face GaN films using ZnO Substrates", E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, I. Brener
• " Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy", M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, R. A. Talalaev
• " Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC", Philippe Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç.
• " Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE Method", T. S. Cheng, C. T. Foxon, N. J. Jeffs, O. H. Hughes, B. G. Ren, Y. Xin, P. D. Brown, C. J. Humphreys, A. V. Andranov, D. E. Lacklison, J. W. Orton, M. Halliwell

Part VII: Devices

• *" GaN Based p-n Structures Grown on SiC Substrates", V.A. Dmitriev
• " Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes", K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura
• " GaN m-i-n LED grown by MOVPE", Da-cheng Lu, Xianglin Liu, Du Wang, Xiaohui Wang, Lanying Lin
• " Research on GaN MODFET's", L. Eastman, J. Burm, W. Schaff, M. Murphy, K. Chu, H. Amano, I. Akasaki
• " Optical Properties of Nitride-based Structures Grown on 6H-SiC", D. V. Tsvetkov, A. S. Zubrilov, V. I. Nikolaev, V. Soloviev, V. A. Dmitriev
• " High-Power High-Temperature Heterobipolar Transistor with Gallium Nitride Emitter", J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck

updated February 20, 1997 .
© 1997 The Materials Research Society