Open Forum Discussion on the Nichia Blue Laser

At the SPIE meeting in San Jose on January 29, 1996, the technical community had its first chance to discuss the very impressive GaN based laser diode results with Dr. Shuji Nakamura. Many questions were raised in our discussions and we would like to propose the following topics for an open discussion on the MRS internet journal.
  1. What are the major factors limiting the achievement of CW operation? P-contact resistance is certainly causes an unnecessary large forward voltage drop (30V), but what other issues remain?
  2. Why did Nakamura start with 26 quantum wells in his first reported laser?
  3. What is the gain per InGaN well at threshold? Any estimates for gain of these materials at current densities of 4kA/cm2 for 7 quantum wells?
  4. Do we really need GaN and/or SiC substrates for CW operation?
  5. How hot is the junction temperature for a laser operating at these high forward voltage and 2 Amps for 1 microsecond pulses?
  6. What is the real reflectivity of a rough RIE facet (500Å) with 70% coating? What might provide better mirrors or facet formation techniques?

This discussion is moderated by steven DenBaars and James S. Harris Jr..

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