"NITRIDES OF GALLIUM, INDIUM AND ALUMINIUM: STRUCTURES AND DEVICES "
M.V.Lomonosov Moscow State University
A.F.Ioffe Physico-Technical Institute of Russian Academy of Sciences
Physical Society of Russia
Sponsored by
Ministry of Science and Technology of Russian Federation
Russian Foundation for Basic Research
Crystal Growth Research Center
A.E.Yunovich - Chairman, M.V.Lomonosov MSU, Dept. of Phys.
V.A.Dmitriev, - Vice-Cairman, A.F.Ioffe Institute.
P.S.Kopjev - A.F.Ioffe Institute.
A.S.Usikov - A.F.Ioffe Institute.
M.G.Mil'vidskii - State Institute of Rare Metals.
G.V.Saparin - M.V.Lomonosov MSU, Dept. of Phys.
M.V.Chukichev - M.V.Lomonosov MSU, Dept. of Phys.
A.N.Kovalev - Moscow Institute of Steel and Alloys.
V.G.Sidorov - St.-Petersburg State Technical University.
A.S.Zubrilov - Scientific Secretary, A.F.Ioffe Institute.
A.N.Turkin - Scientific Secretary, M.V.Lomonosov MSU, Dept. of Phys.
June 2-nd, 1999; 9.00. - 18.00.
M.V.Lomonosov Moscow State University, Department of Physics,
REGISTRATION.
Opening address -
Prof. P.K.Kashkarov, Vice-Dean of the Department of Physics.
A.E.Yunovich - Introduction.
I. "Technology and Properties of III-Nitrides"
Chairman - M.G.Mil'vidskii.
1.1. Hloride vapor phase homoepitaxy of GaN on polycrystalline bulk crystals grown from the flux at reduced Nitrogen pressure.
V.A. Sukhoveyev, V.A. Ivantsov, I.P. Nikitina, A.S.Zubrilov, A.I. Babanin
A.F.Ioffe Institute, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia,
e-mail: Vita@pop.ioffe.rssi.ru D.V. Tsvetkov, Crystal Growth Research Center, 29 Ligovskii Pr., St. Petersburg 193036, Russia. V.A. Dmitriev, Technologies and Devices International, Inc., Bethesda, MD 20814, and Material Science Research Center of Excellence, Howard University, 2300 Sixth St., NW Washington DC, 20059, USA.
1.2. Improved hloride vapor phase epitaxy of GaN on self-facetted sapphire shaped crystals.
I.S. Kotousova, Crystal Growth Research Center, 29 Ligovskii Pr., St. Petersburg 193036, Russia. e-mail: Aib@pop.ioffe.rssi.ru . V.A. Ivantsov, M.G. Minbaeva, A.I. Babanin, I.P. Nikitina, A.E.Nikolaev, V.M. Krimov, P.I.Antonov. A.F.Ioffe Institute, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia.
1.3. Electrical and optical properties ion-implanted GaN p-n-junctions.
E.V.Kalinina, A.S.Zubrilov, A.M.Strelñ'chuk, V.A.Solov'ev, V.A.Dmitriev*.
A.F. Ioffe Physico-Technical Inst., 194021, S-Petersburg, Polytechnicheskaya str. 26.
E-mail: evk@pop.ioffe.rssi.ru;
* TDI Inc., Gaitherburg, MD, USA; E-mail: vladimir@tdii.com
1.4. Studies of Nonuniformities in GaN Films Prepared by Hydride Vapor Epitaxy. A.Ya. Polyakov, A.V. Govorkov, N.B. Smirnov, M.G. Mil'vidskii
Institute of Rare Metals, 109017, Moscow, B. Tolmachevsky, 5, E-mail: polyakov@mail.girmet.ru; . D.V. Tsvetkov, S.I. Stepanov, A.E. Nikolaev, V.A. Dmitriev
A.F. Ioffe Physico-Technical Institute RAS, 194021, S-Petersburg, Polytechnicheskaya str., 26. E-mail: aen@pop.ioffe.rssi.ru
1.5. Development of GaN- based Structures in "Elma-Malahit" (Zelenograd).
K.N.Vigdorovich, Yu.N.Sveshnikov, "Elma-Malahit", Zelenograd.
1.6. MBE Growth of InN with different initial growth stages.
V.V. Mamutin, V.A. Vekshin, V.Yu. Davydov, V.V. Ratnikov,S.V. Ivanov,
and P.S. Kop'ev. A.F. Ioffe Phisico-Technical Inst., 194021, S-Petersburg, Polytechnicheskaya str., 26. e-mail: mam@beam.ioffe.rssi.ru .
C.1.7. GaN-Based Device Structures Grown by HVPE.
A.E.Nikolaev1, D.V.Tsvetkov2, A.E.Cherenkov2, Yu.V.Melnik1,2, A.S.Zubrilov1, M.G.Minbaeva1, N.I.Kuznetsov1, I.P.Nikitina1, V.A.Dmitriev1,2;
1 A.F.Ioffe Physico-Technical Inst. RAN, 194021 St.Petersburg, Polytechnicheskaya 26, E-mail: asz@pop.ioffe.rssi.ru; 2TDI, Inc., Gaitherburg, MD, USA.
C.1.8. Solid solutions InGaN and heterostructures InGaN/Ga(Al)N grown by HVPE method and their haracterisation. D.V.Tsvetkov, A.E.Zubrilov, A.E.Nikolaev, , I.P.Nikitina, N.V.Seredova, N.I.Kuznetsov, A.P.Kovarskii, V.A.Dmitriev.
A.F.Ioffe Institute, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia.
*) Crystal Growth Research Center, 29 Ligovskii Pr., St. Petersburg 193036, Russia.
E-mail: Aib@pop.ioffe.rssi.ru . **) Technologies and Devices International, Inc., Bethesda, MD 20814, and Material Science Research Center of Excellence, Howard University, 2300 Sixth St., NW , Washington DC, 20059, USA
C.1.9. Studies of the Electrical and Luminescent Properties of GaN Crystals Grown From Liquid Solution at Normal Pressure.
A.Ya. Polyakov, A.V. Govorkov, N.B. Smirnov, M.G. Mil'vidskii
Institute of Rare Metals, 109017, Moscow, B. Tolmachevsky, 5, E-mail: polyakov@mail.girmet.ru; . V.A. Sukhoveev, V.A. Ivantsov, V.A. Dmitriev,
Chairman - B.V.Pushnyi.
2.1. Thermodynamic stability of pseudo-binary solutions of III-Nitrides.
A.V.Dobrynin. Moscow Inst. of Electronic Technology, 103498 Moscow.
2.2. Syntesis of AlN films by CVD- method in a camera with cold walls.
B.V.Spitsyn*, M.D.Davydov**, A.B.Spitsyn**, V.P.Stoyan***.
*) Phys.-Chem. Inst. RAS, 117915, Moscow, Leninskii prosp 31.
**) Moscow Inst. of Steel and Alloys, 117936, Moscow, Leninskii prosp 31.
***) M.V.Lomonosov Moscow State University, Dept. Of Chem., Moscow 119899.
2.3. Nanoscale level study of AlN thin films growth by small-angle X-ray scattering methods. M.E. Boiko, E.M.Sher. A.F.Ioffe Physical-Technical Institute of RAN, Polytekhnicheskaya 26, 194221 Saint-Petersburg, e-mail: michael@boiko.ioffe.rssi.ru .
2.4. Reactions of GaN films chemical deposition processes based on Monoammicate Gallium Halogenides pyrolisis.
S.E.Alexandrov, S.-Peterburg Polytechnical University, 195251, S.-Peterburg Polytekhnicheskaya 29. yalexandrov@pop.convey.ru .
C.2.5. Crystallization of multiple heterostructures Gallium and Aluminim Nitrides. N.V.Barovsky, A.V.Dobrynin, B.A.Malukov, G.A.Naida, V.V.Smirnov. Moscow Inst. of Electronic Technology, 103498 Moscow.
C.2.6. Macrostresses and straines in InN/Al2O3 (0001) epilayers doped by Mg and Dy. V.V.Ratnikov, V.V.Mamutin, V.A.Vekshin, S.V.Ivanov.
A.F. Ioffe Phisico-Technical Inst., 194021, S-Petersburg, Polytechnicheskaya str., 26. e-mail: mam@beam.ioffe.rssi.ru .
C.2.7. Growth of AlN films for composition plane cathodes by magnetronic sputtering. A.N.Blaut-Blachev*, L.L.Builov**, B.V.Spitsyn, B.V.Seleznev, N.V.Suetin*, E.I.Givargizov***. *) Phys.-Chem. Inst. RAS, 117915, Moscow, Leninskii prosp 31. **) Moscow Inst. of Steel and Alloys, 117936, Moscow, Leninskii prosp 31. ***) Inst. of Crystallografy RAS, Moscow.
C.2.8. Structure and optical properties of Oxynitride layers.
S.E.Alexandrov, M.A.Tikhomirova, S.-Peterburg Polytechnical University, 195251, St.-Peterburg Polytekhnicheskaya 29. yalexandrov@pop.convey.ru .
C.2.9. MOCVD mashines for III-Nitrides of "Aixtron" - Company.
V.A.Gorbylev. Company "Sigma-Plus", Moscow.
C.2.10. Analysis of purity and crystal perfection on processes of BN hexagonal and BN cubic syntesis.
A.V.Bochko, Institute of Metallurgy RAS, Moscow, Leninsky prosp.
C.2.11. The control of atomic structure during the grouth of boron nitride films in hydrogen plasma.
E.N.Shouleshov , V.V.Khvostov, M.B.Guseva, M.V.Lomonosov Moscow State University, Dept. of Physics, 119899 Moscow, e-mail: eugene@pelc60a.phys.msu.su .
C.2.12. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia.
B.A. Borisov, A.N. Alexeev, V.P. Chaly, A.L. Dudin, D.M. Demidov, D.M. Krasovitsky, Yu.V. Pogorelsky, I.A. Sokolov, A.P. Shkurko.
ATC Semiconductor Devices Ltd. 194156 St.Petersburg, P.O. Box 29; E-mail: ter@atc.rfntr.neva.ru .
III. "Electrical and Photoelectrical Properties of III-Nitrides "
3.1. Some peculiarities of majority charge carrier transport in III-V nitrides. N.M.Shmidt, V.V.Emtsev, A.S.Kryzhanovsky, R.N.Kyutt, W.V.Lundin, D.V.Poloskin, B.V.Pushnyi, V.V.Ratnikov, A.N.Titkov, A.S.Usikov.
Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya Str., St.Petersburg, 194021, Russia;
E-mail: usikov@vpegroup.ioffe.rssi.ru .
3.2. Deep Levels in AlGaN/GaN-based Light Emitting Structures.
A.Y. Polyakov, N.B. Smirnov, A.V.Govorkov, M.G. Mil'vidskii.
Institute of Rare Metals, 109017, Moscow, B. Tolmachevsky, 5, Russia, E-mail: polyakov@mail.girmet.ru; A.S. Usikov, B.V. Pushnyi, V.V. Lundin.
3.3. Growth and properties of GaN doped by Zn and O.
V.G.Sidorov. S.-Peterburg Polytechnical University, 195251, St.-Peterburg Polytekhnicheskaya 29. E-mail: zykov@phsc3.stu.neva.ru .
3.4. Polarization photosensitivity of GaN/GaP heterostructures.
V.Yu.Rud'*, V.M. Botnaryuk**, Yu.V. Zhilyaev**, Yu.V. Rud'**
*) State Technical University 29 Polytekhnicheskaya st., 195251 St.Petersburg, Russia; rudvas@uniys.hop.stu.neva.ru . *) A.F. Ioffe Physico-Technical Inst. RAS, 26 Polytekhnicheskaya st., 194021 St.Petersburg.
3.5. Short wave luminescence of Free-standing wurzite gallium nitride, induced by inhomogenious deformation.
M.E.Kompan, I.N.Safronov, I.Yu.Shabanov, Yu.V.Zhiljaev
A.F.Ioffe Physical-Tech. Inst. RAS, 194021 S.-Petersburg, Politehnicheskaja 26.
E-mail: kompan@solid.ioffe.rssi.ru .
C.3.6. Behaviour of defects in GaN epitaxial layers upon radiations.
N.M.Shmidt, V.Yu.Davydov, V.V.Emtsev, V.V.Kozlovskii, W.V.Lundin, D.V.Poloskin, B.V.Pushnyi, A.V.Sakharov, A.S.Usikov.
Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya Str., St.Petersburg, 194021, Russia; E-mail: usikov@vpegroup.ioffe.rssi.ru .
C.3.7. Photoelectrical properties of Si/GaN<O> heterojunctions.
S.E.Alexandrov, T.A.Gavrikova, V.A.Zykov, S.-Peterburg Polytechnical University, 195251, St.-Peterburg, Polytekhnicheskaya 29. yalexandrov@pop.convey.ru .
C.3.8. Induced photopleochroism of GaN/Si heterostructures.
Yu.V. Rud'* , V.M.Botnaryuk*, Yu.V.Zhilyaev*, V.Yu.Rud'**.
*) A.F.Ioffe Physico-Technical Inst. RAS, 26 Polytekhnicheskaya st., 194021 St.Petersburg; yuryrud@uniys.hop.stu.neva.ru. **) State Techn. University 29 Polytekhnicheskaya st., 195251 St.Petersburg
C.3.9. Spatial inhomogeneities of AlxGa1-xN layers grown on sapphire substrates.
V.V.Tret'yakov, A.S.Usikov, A.V.Bobyl', R.G.Kyutt, V.V.Lundin, B.V.Pushnyi, N.M.Shmidt. A.F.Ioffe Physico-Technical Inst. RAS, 26 Polytekhnicheskaya st., 194021 St.Petersburg; E-mail: V.Tretyakov@pop.ioffe.rssi.ru .
C.3.10. Yung modulus of Gallium Nitride.
Yu.A.Burenkov, V.I.Nikolaev. A.F.Ioffe Physico-Technical Inst. RAS, 26 Polytekhnicheskaya st., 194021 St.Petersburg.
III-Nitrides"
Chairman - V.G.Sidorov.
4.1. Surface lasing under optical pumping in quantum size InGaN/GaN heterostructures .
A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, M.V. Baidakova, Yu.G. Musikhin, I.P.Soshnikova, Zh.I. Alferov, N.N. Ledentsovb, A. Hoffmannb and D. Bimbergb
A.F.Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg;
a Universitet Karlsruhe, 76128 Karlsruhe Germany
b Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
4.2. SEM-diagnostics of morfological and luminescent properties of Gallium Nitride epitaxial layers for different growth technologies.
E.N.Mokhov*, A.A.Volfson*, G.V.Saparin**, S.K.Obyden**, P.V.Ivannikov**, J.Freitas Jr.*** *) A.F.Joffe PTI, 194021, St. Petersburg. **) M.V.Lomonosov MSU, Dept. of Phys., 119899, Moscow.
***) Naval Res. Lab., Washington DC, 20375, USA
4.3. Cathodoluminescence of InGaN epitaxial heterostructures for LEDs. O.N.Ermakov, G.A.Aleksandrova. Company " Sapfir ", 105318, Moscow, Scherbakovskaya st., 53.
M.V. Chukichev. 119899, M.V.Lomonosov Moscow State Univtrsity, Dept. Of Phys.
4.4. Raman spectra and lattice dynamics of hexagonal InN.
V.Yu.Davydov, A.A.Klochikhin, V.V.Emtsev, I.N.Goncharuk, A.N.Smirnov, V.V.Mamutin, V.A.Vekshin and S.V.Ivanov. A.F.Ioffe Physico-Technical Institute, St. Petersburg 194021. M.B.Smirnov, Institute for Silicate Chemistry, St Petersburg 199155. I.A.Abroyan, A.I.Titov, and V.D.Petrikov, State Technical University, St Petersburg 195251.
4.5. X-ray luminescence of AlN thin films.
B.P.Zakharchenya, B.R.Namozov, M.P.Korobkov, E.M.Sher. A.F.Ioffe Physico-Technical Inst. RAS, 26 Polytekhnicheskaya st., 194021 St.Petersburg;
*) State Techn. University 29 Polytekhnicheskaya st., 195251 St.Petersburg.
A.S.Usikov, B.V.Pushnyi, V.V.Lundin. A.F.Ioffe Phisics-Technical Institute, 194021 S.-Peterburg, Politechnitcheskaia 26; E-mail: usikov.vpegroup@pop.ioffe.rssi.ru
C.4.6. Polarized Luminescence of Gallium Nitride.
A.G.Drizhuk, A.D.Shagalov, M.D.Shagalov, S.V.Shesterikov
Vologda State Technical University,160008, Vologda, Lenina 15, VoSTU.
C.4.7. Radiative transitions in nitride semiconductors.
A.L.Oruzheinikov, A.V.Dmitriev, M.V.Lomonosov Moscow State University, Dept of Physics, Moscow, 119899. E-mail: Dmitriev@lt.phys.msu.su .
C.4.8. Luminescence Exitation and Reflection Spectra in the Fundamental Absorbtion Area of Aluminium Nitride Groth by means of MOCVD Methode on Various Substrates. .N.Turkin, A.Yu.Romanenko, V.V.Mikhailin, A.S.Usikov*, B.V.Pushnyi*, V.V.Lundin*. M.V.Lomonosov Moscow State University, Dept. of Physics, 119899 Moscow; E-mail: turkin@scon175.phys.msu.su; A.F. Ioffe Physico-Technical Institute RAS, 194021, S-Petersburg, Polytechnicheskaya str., 26.
C.4.9. Photoluminescence of GaN doped by rare-earth and transient metals.
M.M.Mezdrogina, A.V.Andrianov, Yu.V.Zhilyaev, V.Yu.Nekrasov, I.N.Safron.
A.F.Ioffe Physico-Technical Institute, 194021 S.-Peterburg, Politechnitcheskaia 26.
C.4.10. Optical properties of cubic and hexagonal BN.
M.A. Zlobina, V.V.Sobolev. Udmurt State University, 426034 Izhevsk, Universitetscaya street, 1; E-mail: sobolev@uni.udm.ru
Chairman - A.S.Zubrilov.
5.1. Spectra and Quantum Efficiency of Light-Emitting Diodes based on GaN heterostructures with Quantum Wells. A.E.Yunovich, V.E.Kudryashov, S.S.Mamakin, A.N.Turkin. Dept. of Physics, M.V.Lomonosov MSU, 119899 Moscow; E-mail: yunovich@scon175.phys.msu.su ; A.N.Kovalev, F.I.Manyakhin.
Moscow Institute of Steel and Alloys, 117936 Moscow, Leninski prospect 4.
5.2. LED photoradiometry: special features, methodes and measuring means.
L.S.Lovinsky. Inst. of Optico-Physical Measuremants, Moscow.
5.3. Light-Emitting Diodes and light-sygnal devices. B.F.Trinchuk, V.M.Dmitriev, E.A.Eremin, O.M.Kamenskaya, O.Yu.Pivovar, V.D.Sazhaev, A.B.Sinitsyn, V.N.Sokolov, B.D.Sokolov. Company "Svecha", Zelenograd, cor. 1466, apt. 84.
5.4. Green Light-Emitting Diode with a circle angle diagram for the river traffic lights. L.M.Kogan, I.T.Rassokhin. Company "Optel", 107082 Moscow, Bakuninskaya str., 84.
C.5.5. Heating of GaN-based LEDs at high currents and problems of degradation.
V.Schwegler, C.Kirchner, M.Kamp, K.J.Ebeling, A.Link, W.Limmer, R.Sauer. University of Ulm, 89081 Ulm, Germany. E-mail: veit.schwegler@e-technik.uni-ulm.de. V.E.Kudryashov, A.N.Turkin, A.E.Yunovich. Dept. of Physics, M.V.Lomonosov MSU, 119899 Moscow; E-mail: yunovich@scon175.phys.msu.su.
C.5.6. Influence of ion impurities in sapphire on radiation spectra of GaN-based Light-Emitting Diodes. S.S.Mamakin, V.E.Kudryashov, A.E.Yunovich. Dept. of Physics, M.V.Lomonosov MSU, 119899 Moscow; yunovich@scon175.phys.msu.su .
C.5.7. White light-emitting diodes based on GaN covered by luminophor.
V.S.Abramov, O.N.Ermakov, G.D.Kuznetsov, A.M.Merkushev, V.P.Sushkov, N.V.Scherbakov. Company " Sapfir ", 105318, Moscow, Scherbakovskaya st., 25.
Ñ.5.8. Electroluminescence kinetics of GaN:(Zn,O) Light-Emitting Diodes. V.G.Sidorov, D.V.Sidorov, A.G.Drizhuk*, M.D.Shagalov*. State Techn. University 29 Polytekhnicheskaya st., 195251 St.-Petersburg; E-mail: rykov@phsc3.stu.neva.ru. Vologda Polytechnical Institute, 160035 Vologda, Lenina str. 15.
C.5.9. Light-emitting diodes of visible range in the spectroscopy of surface phenomena. A.Y.Gokhshtein, Frumkin Institute of Electrochemistry, Russian Academy of Scienced, 117071 Moscow, Leninsky prospekt 31.
C.5.10. Layered Aluminium Nitride devices for surface acoustic waves generation.
A.F.Belyanin, B.V.Spitsyn*, N.I.Sushentsov**. Inst. "Technomash", Moscow; *) Fhys-Chem. Inst. RAS, Moscow; **) Mariisky Technical Univ., Ioshkar-Ola..
DISCUSSION Chairmen - M.G.Milvidski, A.E.Yunovich.
CLOSING ADDRESS - V.A.Dmitriev, Vice-chairman of the Organizing Committee.