A breakthrough has been done in research, development and industrial applications of GaN based structures and devices during last 5-10 years. Effective green, blue and violet light-emitting diodes, room temperature violet injection lasers, high- frequency power transistors, UV photo- detectors are produced and commercialized.

Annual workshops "Nitrides of Gallium, Indium and Aluminium: Structures and Devices" were organized in Russia in 1997 - 2000 by M.V.Lomonosov Moscow State University and A.F.Ioffe Physico-Technical Institute (PhTI) of Russian Academy of Sciences (St. Peterburg).

The interest to Nitride studies was growing in Russia during last 3-5 years. More than 80 scientists and engineers of 25 Institutes attended the 4^th Workshop (PhTI, Sept. 2000).

Crystal growth and p-n- heterostructures technologies, of materials and devices physical property studies, development of arrangements using GaN- devices are in progress. Successful cooperation with foreign partners helps the research. Industrial companies have begun LEDs production from imported chips. Traffic lights, architectural details, lamps, full-color displays, railway and river traffic lights are produced and used commercially.

The All-Russian Conference "Nitrides of Gallium, Indium and Aluminum: Structures and Devices" took place in Moscow, November 1-2 2001, at the Department of Physics, M.V.Lomonosov Moscow State University.

A.E.Yunovich M.V.Lomonosov MSU, Chair

P.S.Kopjev A.F.Ioffe PhTI, Vice-Chair

V.S.Abramov "Corvette - Lights"

V.A.Dmitriev A.F.Ioffe PhTI

A.S.Zubrilov A.F.Ioffe PhTI

P.K.Kashkarov M.V.Lomonosov MSU

A.N.Kovalev Moscow Institute of Steel and Alloys

V.V.Lundin A.F.Ioffe PhTI

S.P.Chernykh TA "Uni Sapphire"

M.G.Milvidskii State Institute of Rare Metals

V.G.Mokerov Institute of Radio and Electronics

G.V.Saparin M.V.Lomonosov MSU

V.G.Sidorov Technical University of S. - Peterburg

A.N.Turkin M.V.Lomonosov MSU, Scientific Secretary

A.S.Usikov A.F.Ioffe PhTI

M.V.Chukichev M.V.Lomonosov MSU

10.00. - 10.10. Dean of the Dept. of Physics, MSU, Prof. V.I.TRUKHIN

10.10.-10.20. Introduction. Chair of the Organizing Committee A.E.Yunovich

10.20.-10.25. Schedule. Scientific Secretary A.N.Turkin

1. MATERIALS TECHNOLOGY.

HOMOEPITAXIE AND BULK CRYSTAL GROWTH

10.25.-11.25. Chair - P.S.Kopjev

1.1. 10.25. - 10.40. MOCVD GROWTH AND CHARACTERIZATION OF GaN LAYERS AND AlGaN/GaN HETEROSTRUCTURES ON HVPE GROWN TEMPLATES

A.S.Usikov ¹) (A), W.V.Lundin (A), E.E.Zavarin (A), A.I.Besulkin (A), A.V. Sakharov (A), A.I.Pechnicov (C)^,, I.P.Nikitina (B), A.V.Fomin (A), V.V.Tretyakov (A) AND V.A.Dmitriev ¹) (C)

(a) A.F.Ioffe Iinstitute, Politechnicheskaya 26, St. Petersburg, 194021,Russia.

(b) Crystal Growth Research Center, 12-H, 29 Ligovskii Pr., St. Petersburg, 193036, Russia.

(c) TDI, Inc., 8660 Dakota Dr., Gaithersburg, MD, 20877 USA.

1.2. 10.40. - 10.55. GaN AND AlGaN EPIWAFERS FOR PRODUCTION

Y.Melnik, A.Pechnikov, D.Tsvetkov, V.Dmitriev and A.Davydov*

TDI, Inc., 8660 Dakota Dr., Gaithersburg, 20877 MD, USA

E-mail: yuvm@tdii.com

*Metallurgy Division, NIST, 100 Bureau Dr., Gaithersburg, 20899 MD, USA

1.3. 10.55. - 11.10. PREPARATION OF BULK LARGE AREA GaN LAYERS AND INVESTIGATION OF THEIR PROPERTIES

U.V.Zhilyaev, A.V.Nasonov, S.D.Raevsky, S.N.Rodin, M.P.Sheglov, V.U.Davidov

A.F.Ioffe Phys Technical Ins, 26 Polytechnicheskaya, 194021, St. Petersburg, RUSSIA, (812)-247-93-16, e-mail: Zhilyaev@jyuv.ioffe.rssi.ru

1.4. 11.10.-11.20. OPTICAL PROPERTIES OF ZnO FILMS GROWN ON GaN/á-Al₂O₃ BY CHEMICAL VAPOR DEPOSITION

M.V. Chukichev*, B.M.Ataev**, V.V.Ìàmedov**, Ya.I.Àlivov***, I.I.Khodos***,Å.Å.Zavarin

*Moscow State University, Department of Physics, Ìîscow,

**Institute of Physics , Dagestan Scientific Center of RAS, Ìàkhachkala,

***Institute of Microelectronics Technology, RAS, Chernogolovka, Ìîscow dist.,

A.F.Ioffe PhTI, S.-Peterburg

2.1. 11.35. - 11.50. SURFACE MECHANISMS AND GROWTH KINETICS IN GROUP III NITRIDE EPITAXY

S.Yu. Karpov

Soft Impact Ltd, St.Petersburg, Russia

2.2. 11.50. - 12.00. MECHANISMS OF GROUP III NITRIDES MOVPE

R.A.Talalaev , E.V.Yakovlev, Yu.A.Shpolyanskiy, S.Yu.Karpov, and Yu.N.Makarov¹

Soft Impact Ltd, St.Petersburg, Russia

¹ STR,Inc, Richmond, VA, USA

2.3. 12.00. - 12.15. P-T-x phase diagram of the Gallium - Nitrogen System

A.Davydov, W.Boettinger, U.Kattner, A.Nikolaev*.

Metallurgy Division, NIST, 100 Bureau Dr., Gaithersburg, MD 20899, USA

E-mail: albert.davydov@nist.gov

*Ioffe Phys. Tech. Inst., Politekhnicheskaya 26, St Petersburg 194021, Russia

Yuri Melnik TDI, Inc., 8660 Dakota Dr., Gaithersburg, 20877 MD, USA

2.4. 12.15. - 12.25. HETEROEPITAXY OF GALLIUM NITRIDE LAYERS:

THE ROLE OF INITIAL STAGES IN FILM FORMATION

S.A.Kukushkin, V.N.Bessolov,* A.V.Osipov, A.V.Luk'yanov**

Institute of Mechanical Engineering, RAS, St. Petersburg, 199178 Russia

* Ioffe Physico-Technical Institute, RAS, St. Petersburg, 194021 Russia

** Foundation for Support Science and Education, St. Petersburg, 192007 Russia

2.5. STM STUDY OF ATOMIC STRUCTURES ON THE HEXAGONAL GaN FILMS

R.Z.Bakhtizin¹⁾, Q.-Zh.Xue²⁾, Q.-K.Xue²⁾, and T.Sakurai²⁾

¹⁾Bashkir State University, Ufa 450074, Russia

²⁾Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

2.6. 12.25. - 12.35. GROWTH OF GaN/AlGaN QW HETEROSTRUCTURES BY PLASMA-ASSISTED MBE

V.A.Vekshin*, V.N.Jmerik, V.Yu.Davydov, V.V.Ratnikov, M.G.Tkachman, T.V.Shubina, and S.V.Ivanov

Ioffe Physico-Technical Institute of RAS, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia. * Å-mail: vekshin@beam.ioffe.rssi.ru

2.7. 12.35. - 12.45. PROPERTIES of AlN LAYERS GROWN on SiC SUBSTRATES in A WIDE TEMPERATURE RANGE by HVPE

O.Yu.Ledyaev, A.E.Nikolaev, I.P.Nikitina, A.V.Fomin, V.A.Dmitriev, M.S.Dunaevski *, A.N.Titkov *.

Ioffe Institute and Crystal Growth Research Center, St. Petersburg, Russia

*Ioffe Institute St. Petersburg, Russia

2.8. 12.45.-12.55. MOLECULAR- BEAM EPITAXIAL GROWTH OF III NITRIDES USING AMMONIUM.

I.A.Sokolov, D.M.Krasovitski, Yu.V.Pogorelski, M.V.Stepanov, V.P.Chalyi, A.P.Shurko, S.P.Yakovlev.

ATC "Semiconductor Technologies and Equipment", St.-Peterburg; ter@atc.rfntr.newa.ru .

1.5.C. INITIAL STAGES of the GaN GROWTH on SILICON

V. N. Bessolov , Yu. V. Zhilyaev, E.V. Konenkova, S. A. Kukushkin*, A. V. Luk'yanov**, S. D. Raevskii, and V.A. Fedirko^***

A. F. Ioffe PhTI, St. Petersburg, 194021 Russia

*Institute of Mechanical Engineering, St. Petersburg, 199178, Russia

** Foundation for Support Science and Education, St. Petersburg, 192007, Russia

***Stankin Moscow State University of Technology, Moscow, 101472, Russia

1.6.C. GALLIUM NITRIDE SURFACE PRETREATMENT FOR HOMOEPITAXY

A.V. Fomin^1,2 , A.E.Nikolaev^1,2, I.P. Nikitina^1,2, G.AOnushkin², A.V.Pechnikov, V.A. Dmitriev

1. A.F.Ioffe Institute, 26 Politechnicheskaya St, St Petersburg, 194021, Russia.

2. Crystal Growth Research Center, 12-H, 29 Ligovskii pr, St Petersburg, 193036,Russia.

TDI Inc., 8660 Dakota Dr., Gaithersburg, MD, 20877 USA.

2.9.C. AlN AND GaN FILMS CRYSTALLIZATION FROM PERCURSORS ON Si AND DIAMOND

K.Yu.Tchernykh¹⁾, B.V.Spitsyn²⁾, N.N.Melnik³⁾, M.A.Prelas⁴⁾, A.B.Spitsyn^{4), 5)}, V.P.Stoyan¹⁾, V.I.Petrov¹⁾, M.V.Chukichev¹⁾

1) Moscow State University, Moscow, Russia,

2) Institute of Physical Chemistry RAS, Moscow, Russia,

3) P.N. Lebedev Physical Institute RAS, Moscow, Russia,

4) University of Missouri - Colombia, USA,

5) Moscow Institute of Steel and Alloys, Moscow, Russia

2.10.C. THE OPTIMIZATION OF InGaN GROWTH BY MOLECULAR BEAM EPITAXY USING AMMONIA

D.Ì. Krasovitsky*, Yu.V. Pogorelsky, S.I. Petrov, I.À. Socolov, Ì.V. Stepanov, V.P. Chaly, À.P. Shcurko

ATC "Semiconductor Technologies and Equipment", LTD., P.O. Box 29, 194156,

St.-Petersburg; ter@atc.rfntr.newa.ru .

2.11.C.  RADICAL-BEAM GETTERING EPITAXY - A NEW TECHNIQUE IN FORMATION TECHNOLOGY FOR GaN/GaAs-TYPE HETEROSTRUCTURES

V.V.Kidalov*, M.B.Kotljarevsky*, G.A.Sukach, S.M.Belousov
*Berdyansk State Educational College, Berdyansk, Ukraine

Institute of Semiconductor Physics of the Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine.

2.12.C. GROWTHS RATE FOR HVPE OF GAN

Å.N. Vigdorovich, J.N. Sveshnikov

JSC" Elma - Malachite ", Moscow

2.13.C. TERMODINAMIC ANALYSIS OBTAINING GAN -BASED SOLID SOLUTIONS

Å.N. Vigdorovich, J.N. Sveshnikov

JSC" Elma - Malachite ", Moscow

2.14.C. The nucleation of epitaxial layers of GaN

T.I. Markova, Å.N. Vigdorovich, J.N. Sveshnikov

JSC" Elma - Malachite ", Moscow

3.6.C. DEEP ETCHING OF GaN FILMS BY IONS OF NON-AGGRESSIVE GASES

A.I.Stognij, O.M.Stukalov, N.N.Noviyskii, E.V.Lutsenko*, G.P.Yablonskii*, B.Schineller** and M.Heuken**.

Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, P. Brovki str. 17, Minsk 220072, Belarus, e-mail: stognij@ifttp.bas-net.by

*Stepanov Institute of Physics, National Academy of Sciences of Belarus,

F. Skaryna av. 68, Minsk 220072, Belarus, e-mail: lutsenko@dragon.bas-net.by

**AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany

3.7.C. In_1-xGa_xN HETEROSTRUCTURES AND THIN-FILM ORGANIC STRUCTURES AS PROMISING MEDIA FOR ORGANIC-INORGANIC OPTOELECTRONICS

O.N. Ermakov

Joint Stock Company " Sapfir" , Moscow 105318 , Russia

3.8.C. ANALYSIS OF LOCAL STRUCTURAL AND COMPOSITION EFFECTS IN EPITAXIAL STRUCTURES IN In - Ga - Al - N , In - Ga - Al - P ALLOY SYSTEMS

O.N. Ermakov

Joint Stock Company " Sapfir " , Moscow 105318 , Russia

4.6.C. STEADY-STATE AND NOISE CHARACTERISTICS OF GROUP Group III-NITRIDE -BASED ELECTRONIC DEVICES

S.A. Vitusevich, M.V. Petrychuk*, N. Klein, S.V. Danylyuk*, V.N. Sokolov*, V.A. Kochelap* and A.E. Belyaev*.

Institut für Schichten und Grenzflaechen, Forschungsz.-Juelich, D-52425 Juelich, Germany

*Institute of Semiconductor Physics, NASU, 03028 Kiev, Ukraine

4.7.C. MODIFICATION OF TRANSMITTING LONG LINE METHOD FOR DETERMINATION OF CONTACT RESISTANCE TO GaN LIKE MATERIALS

V.N.Danilin, T.A.Zhukova, M.A.Komarov, M.L.Belousov*, M.V.Perevozchikov*, N.A.Charykov*.

"Pulsar". *Moscow Institute of Energy, char@vostok.ru

5.5.C. PHOTOLUMINESCENCE AND LASING OF GALLIUM NITRIDE EPITAXIAL LAYERS GROWN ON Al₂O₃ AND Si SUBSTRATES

E.V.Lutsenko, V.N.Pavlovskii, V.Z.Zubialevich, G.P.Yablonskii,

H.P.Plotzmann*, B.Schineller*, M.Heuken*

Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna av. 68, Minsk 220072, Belarus, e-mail: lutsenko@dragon.bas-net.by

*AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany

5.6.C. CATHODOLUMINESCENCE SPECTRA OF InGaN/AlGaN/GaN HETEROSTRUCTURES.

A.N.Turkin, A.V.Ulitin, M.V.Chukichev

M.V.Lomonosov Moscow State University, Department of Physics,

119899 Moscow, Russia. E-mail: a_turkin@chat.ru

6.6.C. INFLUENCE OF INTERNAL FIELDS ON A TUNNELING CURRENT IN THE STRAINED STRUCTURES GaN/Al_1-xGa_xN (0001)

S.N. Grinyaev*, A.N. Razzhuvalov

V.D.Kuznezov Siberian PhTI; 634050, Tomsk, Novosobornaya pl. 1, e-mail: gsn@phys.tsu.ru

6.7.C. DEFINITION OF III NITRIDES SURFACE LAYERS POLARITY

K. V. Zakoutailov, A. N. Kovalev, A. A. Sokolov*^*

Moscow State Institute of Steel and Alloys: E-mail: zakkonst@zmail.ru

*Scientific and production equipment " Ltd., St.-Petersburg

6.8.C. ON THE NATURE OF BREAKDOWN AND CONDUCTIVITY ON SURFACE OF AlGaN EPITAXIAL LAYERS.

S.Yu.Shapoval, V.L.Gurtovoi, A.V.Kovalchuk, C.Gaquiere*, D.Theron*.

Institute of Microelectronics Technology Problems RAS, 142432 Chernogolovka.

E-mail: Shapoval@ipmt-hpm.ac.ru

*Institut d'Electronique et de Microelectronique du Nord, UMR-CNRS 9929, Dep-t Hyperfrequences et Semiconducteurs, Avenue Poincare BP 69, 59652 Villeneuve, France.

6.9.C. AN ALTERNATIVE MODEL FOR THE BLUE LUMINESCENCE BAND IN HIGHLY Mg-DOPED GaN

M.Leroux¹, P.Vennéguès¹, S.Dalmasso¹, M.Benaissa², E.Feltin¹, P.de Mierry¹, B.Beaumont¹, B.Damilano¹, N.Grandjean¹, P.Gibart¹

¹ Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis,06560 Valbonne, France.

² Laboratoire TECSEN, UMR 6122 CNRS, Faculté des Sciences et Techniques de St Jérome, 13013 Marseille cedex 20, France.

7.5.C. PARTIAL DESTRUCTION OF NON DOPED SUPERLATTICES n-AlGaN/GaN BY ARGON IMPLANTATION.

A.Y.Polyakov, N.B.Smirnov, A.V.Govorkov, M.G.Mil'vidskii, A.A.Shlenski, V.T.Bublik*, K.D.Scherbachev*, V.A.Dravin**, A.Osinsky**, P.E.Norris**, S.J.Pearton***

Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia, E-mail: polyakov@mail.girmet.ru . *Moscow Institute of Steel and Alloys.

**P.N.Lebedev Physical Institute RAS, Moscow.

**Corning Applied Technologies, Woburn, MA 01801, USA.

***ECE Department, Texas Tech University, Lubbock, TX 79409, USA.

8.7.C. SOME FEATURES OF LIGHT EMITTING STRUCTURES BASED ON GaN(Zn,O).

A.G.Drizhuk*, V.A.Kukushkin*, L.N.Suhanov*, S.V.Shesterikov

Vologda state physic-mathematical lyceum, 18, Proletarskaya street, Vologda, 160035

zsvo@vologda.ru; Vologda state technical university, 15, Lenina street, Vologda, 160008

8.8.C. LEDs PHOTOMETRIC MEASUREMENTS

Stolyarevskaya R.I.*, Anikin P.P., Anikin D.P., Nikiforov S.G.

*VNIIOFI, Ozernaya 46, 1119361 Moscow, stoly-m4@vniiofi.ru ;

"Corvette-Lights" Mironovskaya 10A, 105058, Moscow, Anik@corvett.sitek.net

3.1. 15.15. - 15.30. AlGaN/GaN SUPERLATTICES, GROWTH AND CHARACTERIZATION

W.V.Lundin, A.V.Sakharov, A.F.Tsatsul'nikov, E.E.Zavarin^*, A.I.Besulkin, M.F.Kokorev, R.N.Kyutt, V.Yu.Davydov, V.V.Tretyakov, D.V.Pakhnin, and A.S.Usikov

A.F.Ioffe PhTI, Politekhnicheskaya 26, 194021, St-Petersburg, Russia, *zavarin2001@mail.ru

3.2. 15.30. - 15.45. MOSAIC STRUCTURE: ONE OF THE MAIN FACTORS DETERMINING ELECTRICAL AND OPTICAL PROPERTIES OF III NITRIDES.

N.M.Schmidt. A.F.Ioffe PhTI, Politekhnicheskaya 26, 194021, St-Petersburg, Russia.

3.3. 15.45. - 15.55. INFLUENCE OF PHYSICAL AND TECHNOLOGICAL FACTORS ON CHARACTERISTICS OF MOCVD- GROWN EPITAXIAL IN InGaN ALLOY SYSTEM

G.A.Aleksandrova, O.N.Ermakov, V.V.Soloviev, B.0.Apuchtin, M.V.Chukichev*.

Joint Stock Company " Sapfyr ", Moscow 105318, Russia; *Dept. of Phys., Moscow State University, Moscow 119899, Russia

3.4. 15.55.-16.05. AlGaN EPITAXIAL WAFERS FOR UV DETECTORS

G.A.Onushkin*, A.E.Nikolaev, A.V.Fomin, O.Yu.Ledyayev, A.E.Cherenkov, E.V.Kalinina, I.P.Nikitina, V.A.Dmitriev

Ioffe Institute, St. Petersburg, Russia,

Crystal Growth Research Center, St. Petersburg, Russia,

3.5. 16.05. - 16.20. SCANNING ELECTRON MICROSKOPY OF GaN- BASED STRUCTURES.

S.K.Obyden, G.V.Saparin, P.V.Ivannikov.

M.V.Lomonosov Moscow State University, Dept. of Physics. E-mail: obyden@ccl.msu.su

4.1. 16.35. - 16.50. PROBLEMS OF GaN - BASED FIELD-EFFECT TRANSISTORS DEVELOPMENT.

A.N.Kovalev. Moscow Institute of Steel and Alloys, Leninski Prosp., 4,

117936, Moscow, Russia; E - mail: Kovalev@tmte.misa.ac.ru

4.2. GaN FIELD- EFFECT TRANSISTORS.

L.E.Velikovskii, D.M.Krasovitskii*, V.G.Mokerov, U.V.Pogorelskii*, I.A.Sokolov*, M.V.Stepanov*,²V.P.Chalii*, S.P.Yakovlev*, N.N.Bazlov*.

Center of Micro- and Nanoelectronics of IRE RAS, 101999, Moscow, Russia, GSP-9, 11, Mokchovaya str., phone: 7(095)2031535, fax. 7(095)2038114, E-mail: mok@mail.cplire.ru

*"Semiconductor Devices" Company, St. Petersburg,

**R.F. Ministry of Defence, Moscow, K-160, tel. 7(095)195-25-13

4.3. 17.05. - 17.15. PERSPECTIVES OF DEVELOPMENT AND PRODUCTION OF HETEROSTRUCTURES GaN/AlGaN - BASED NEW GENERATION MICROVAWE DEVICES.

V.N.Danilin,Yu.P.Dokuchaev, T.A.Zhukova, M.A.Komarov, A.A.Arendarenko*, Yu.N.Sveshnikov*, A.N.Kovalev**, I.A.Sokolov***, N.A.Charykov****.

"Pulsar". *"Elma-Malakhite". **Moscow Institute of Steel and Alloys. ***ATC "Semiconductor Technologies and Equipment", St.-Petersburg. ****Moscow Institute of Energy, char@vostok.ru

4.4. 17.15. - 17.25. APPLICATION OF GaN HETEROSTRUCTURES FOR TERAHERTZ GENERATION

V.A.Kozlov, A.B.Kozyrev,^* A.V.Samokhvalov

Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, GSP-105

e-mail: kozyrev@ipm.sci-nnov.ru

4.5. 17.25. - 17.35. THE GAMMA RAY RADIATION EFFECTS ON STEADY-STATE CHARACTERISTICS OF AlGaN/GaN BASED HEMTs.

S.A.Vitusevich, N.Klein, A.E.Belyaev*, S.V.Danylyuk*, R.V.Konakova*, A.M.Kurakin*, A.E.Rengevich*, B.A.Danilchenko***

Institut für Schichten und Grenzflaechen, Forschungsz.-Juelich, D-52425 Juelich, Germany

*Institute of Semiconductor Physics, NASU, 03028 Kiev, Ukraine

**Institute of Physics, NASU, 03028 Kiev, Ukraine

4.6. 17.35. - 17.45. COMPUTER COMPLEX FOR CONTACT MEASUREMENTS OF GaN - LIKE MATERIALS.

N.A.Charykov, M.L.Belousov, M.V.Perevozchikov, Yu.V.Oreshnikov, V.N.Danilin*, T.A.Zhukova*.

"Pulsar". *Moscow Institute of Energy, char@vostok.ru

5.1. 09.30. - 09.45. Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers

W.V.Lundin¹ (A,B), A.V.Sakharov (A,B), A.S.Usikov (A,B), D.A.Bedarev (A), A.F.Tsatsul'nikov (A), Ru Chin Tu (B), and Jim Y. Chi (B)

(a) A.F.Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021, St-Petersburg, Russia

(b Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute, Bldg.78, 195-8 Sec. 4, Chung Hsing Rd. Chutung, Hsinchu 310, Taiwan, R.O.C.

5.2. 09.45. - 09.55. BLUE-GREEN OPTICALLY PUMPED InGaN/GaN/AlGaN LASER

A.V.Sakharov, A.S.Usikov, W.V.Lundin, D.A.Bedarev, A.F.Tsatsul'nikov, E.E.Zavarin, A.I.Besulkin, N.N.Ledentsov*, D.Bimberg*

A.F.Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021, St-Petersburg, Russia

*Institut fur Festkorperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

5.3. 09.55. - 10.10. Violet-Blue lasers based on InGaN/GaN quantum dimensional heterostructures

E.V. Lutsenko, V.N.Pavlovskii, V.Z.Zubialevich, G.P.Yablonskii, A.V. Mudryi*, H.Protzmann**, B.Schineller** and M.Heuken**

Stepanov Institute of Physics, National Academy of Sciences of Belarus,

F. Skaryna av. 68, Minsk 220072, Belarus, e-mail: lutsenko@dragon.bas-net.by

*ISSSP, NAS of Belarus, P. Brovki str. 17, Minsk 220072, Belarus

**AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany

5.4. 10.10. - 10.25. EXCITONIC STATES OF GaN/AlGaN QUANTUM WELLS UNDER HIGH DENSITY OF EXCITATION

D.K.Nelson, M.A.Jacobson, N. Grandjean*, J. Massies*

A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

*Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, Sophia Antipolis, 06560 Valbonne, France

6.1. 10.25.-10.40. OPTICAL PARAMETERS OF BULK GaN DOPED WITH Er

Yu.V.Zhilyaev, V.V.Krivolapchuk, M.M.Mezdrogina, S.D.Raevskii, S.N.Rodin, A.P.Skvortsov, and Sh.A.Yusupova

A.F.Ioffe Physical-Technical Institute Russian Academy of Sciences, 194021 Politechnicheskaya, 26, St-Petersburg; E-mail: yushaira@hotmail.com

6.2. 10.25.-10.40. PHONON-ASSISTED RADIATIVE RECOMBINATION OF EXITONS IN GaN GROWN BY MBE AND HVPE

M.G.Tkachman, T.V.Shubina, V.N.Jmerik, S.V.Ivanov, T.Paskova*, and B.Monemar*.

A.F.Ioffe Institute of RAS, Politeknicheskaya 26, 194021 St-Petersburg, Russia. *Dept. of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden

6.3. 10.40.-10.50. ELASTIC AND PLASTIC DEFORMATIONS IN HETEROEPITAXIAL LAYERS OF ALUMINUM NITRIDES AND GALLIUM NITRIDE

Dobrynin A.V.

Moscow Institute of Electronic Engineering, 103498 Moscow, Zelenograd,

E-mail: dobrynin@zemail.ru

6.4. 10.40.-10.55. FEATURES MOCVD OF Ga(In,Al)N

J.N. Sveshnikov, Å.N. Vigdorovich

JSC" Elma - Malachite ", Moscow.

6.5. 10.55.-11.05. TERMODINAMIC ANALYSIS OBTAINING GAN

Å.N.Vigdorovich, J.N.Sveshnikov,

JSC" Elma - Malachite ", Moscow

A.Y.Polyakov, N.B.Smirnov, A.V.Govorkov, M.G.Mil'vidskii, A.Osinsky*, P.E.Norris*, N.N.Faleev**

Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia, E-mail: polyakov@mail.girmet.ru

*Corning Applied Technologies, Woburn, MA 01801, USA

**ECE Department, Texas Tech University, Lubbock, TX 79409, USA

7.2. 11.50.-12.00. ELECTRICAL AND OPTICAL PROPERTIES OF MODULATION DOPED p-AlGaN/GaN SUPERLATTICES

A.Y.Polyakov, N.B.Smirnov, A.V.Govorkov, A.Osinsky*, P.E.Norris*, S.J.Pearton**,

J.Van Hove***, A.Wowchak***, P.Chow***

Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia, E-mail: polyakov@mail.girmet.ru

*Corning Applied Technologies, Woburn, MA 01801, USA

**MSE Department, University of Florida, Gainesville, FL32611, USA

***SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344, USA

7.3. 12.00.-12.15. PARTIAL DISORDERING OF UNDOPED n-AlGaN/GaN SUPERLATTICES BY Ar IMPLANTATION

A.Y.Polyakov, N.B.Smirnov, A.V.Govorkov, M.G.Mil'vidskii, A.A.Shlenskii, V.T.Bublik*, K.D.Chsherbatchev*, V.A. Dravin**, A.Osinsky***, P.E.Norris***, S.J.Pearton***.

Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia, E-mail: polyakov@mail.girmet.ru

*Moscow Institute of Steel and Alloys, Moscow, 117936, Leninskiy Av. 4

**P.N.Lebedev Phisical Institute, RAS

***Corning Applied Technologies, Woburn, MA 01801, USA

****MSE Department, University of Florida, Gainesville, FL 32611, USA

7.4. OPTICAL and ACOUSTICAL PHONONS in STRAINED HEXAGONAL GaN/AlGaN SUPERLATTICES

V.Yu.Davydov^1*, A.A.Klochikhin¹, I.E.Kozin², I.N.Goncharuk¹, A.N.Smirnov¹, R.N.Kyutt¹, M.P.Scheglov¹, A.V.Sakharov¹, W.V.Lundin¹, E.E.Zavarin¹, and A.S.Usikov¹

1. Ioffe Physico-Technical Institute, Russian Academy of Science , Polytechnicheskaya 26, 194021 St. Petersburg, Russia * valery.davydov@pop.ioffe.rssi.ru

2. Institute of Physics, St. Petersburg State University, 198904 St. Petersburg, Russia

7.4. 12.15. - 12.25. ANALYSIS OF THERMAL PROCESSES IN MULTILAYER InGaN/AlGaN/GaN HETEROSTRUCTURES WITH QUANTUM WELLS

G.A. Sukach . Institute of Semiconductor Physics, National Academy of Sciences of Ukraine

45 Prospect Nauki, 03028 Kyiv, Ukraine, E-mail: sukach@isp.kiev.ua

8.1. 14.40. - 14.55. ELECTRICAL PROPERTIES AND LUMINESCENCE SPECTRA OF LIGHT-EMITTING DIODES WITH MODULATED DOPED InGaN/GaN HETEROSTRUCTURES WITH QUANTUM WELLS

F.I.Manyakhin, A.B.Wattana, A.E.Yunovich*, S.S.Mamakin*

Moscow State Institute of Steel and Alloys,

119991, Moscow, Leninskii prosp., 4. E-mail: fman@misa.ac.ru

*M.V.Lomonosov Moscow State University, Dept. of Physics. yunovich@scon175.phys.msu.su

8.2. 14.55. - 15.10. WHITE LIGHT EMMITING DIODES LUMINESCENCE SPECTRA:

ANGLE DEPENDENCE AND KINETICS.

S.S.Mamakin, A.A.Chugunov, A.E.Yunovich, V.Z.Zubelevich*, E.V.Lutsenko*

M.V.Lomonosov Moscow State University, Dep-t of Physics. yunovich@scon175.phys.msu.su

*B.I.Stepanov Institute of Physics, Acad. of Sci. of Belarus. lutsenko@dragon.bas-net.by

8.3. 15.15. - 15.25. INFLUENCE OF EXTERNAL FACTORS ON NONRADIATIVE CURRENTS IN LIGHT-EMITTING DIODES WITH HETEROSTRUCTURES.

F.I.Manyakhin, A.B.Wattana, I.V.Ryzhikov*,V.S.Abramov**.

Moscow Institute of Steel and Alloys, 119991, Moscow, Leninski Prosp., 4.

E-mail: fman@misa.ac.ru. *Moscow Academy of Informatics and Device Construction.

**<<Corvette - Lights>>, Moscow.

8.5. 15.25. - 15.35. MEANS, METHODS AND RESULTS OF PRECISION MEASUREMENTS OF OPTICAL PHYSICAL PARAMETERS OF NITRIDE LEDs.

L.S. Lovinsky. All-Russian institute of optical-physical measurements; vniiofi@vniiofi.ru

8.6. 15.35. - 15.45. OPTOELECTRONIC SENSORS BASED ON M-I-n-GaN LEDs

V.G.Sidorov, A.G.Drizhuk*, S.V.Shesterikov*.

State Technical University, St. Petersburg, 29, Politechnicheskaya Str., 195251

sidorov@twonet.stu.neva.ru . *State Technical University, Vologda, 15, Lenina Str., 160000

9.1. 16.00. - 16.15. SYGNALS AND LIGHTING BASED ON InGaN LIGHT-EMITTING DIODES.

L.M.Kogan, I.T.Rassokhin. Scientific-Production Center "OPTEL", Moscow.

9.2. 16.15. - 16.25. PROBLEMS OF HEAT DISSIPATION FOR GaN -BASED LIGHT-EMITTING DIODES.

V.S.Abramov. "Corvette-Lights" Mironovskaya 10A, 105058, Moscow

lights@corvett.sitek.net

9.3. 16.25. - 16.35. RAILWAY TRAFFIC LIGHTS BASED ON LEDs.

D.R.Agafonov. "Corvette-Lights" Mironovskaya 10A, 105058, Moscow

lights@corvett.sitek.net

Vice-Chair of Organizing Committee: P.S.Kopjev