AlGaN, 23, 237, 275, 281, 305
AlN, 87, 111, 269, 317, 393, 437, 475
aluminum nitride, 437
annealing, 407
band structure, 105, 231, 251, 445, 487
biexciton, 237
bismuth, 75
buffer layers, 69, 161, 187
carbon nitride, 31
cathodoluminescence, 51, 87, 187, 207, 293
clusters, 45
contacts, 331, 421, 427
CVD, 57, 93
defects, 155, 179, 183, 269, 287, 407
detectors, 51
device processing, 331, 385
doping, 7, 105, 111, 123, 131, 137, 281, 299
electroluminescence, 469
electron
diffraction, 317
field emission, 437
erbium, 123, 131
etching
chemically assisted ion beam, 373, 427
dry, 355, 367, 373, 379, 393
photoelectrochemical, 349
wet, 331
excitons, 179, 243, 293
field-effect transistors, 385
fracture, 201
gain, 487
GaN, 3
bulk, 143, 149
cubic, 63
gratings, 379
Grüneisen parameters, 225
hardness, 201
heterostructures, 13, 213, 469
high electric fields, 75, 457, 463
holographic lithography, 379
HVPE, 63
impact ionization, 457
impurities, 3, 281
InAlN, 393
InGaN, 13, 57, 275, 281, 393, 481
InN, 149, 161
inversion domains, 323
ion implantation, 401, 407
ionization levels, 331
laser(s), 487
assisted growth, 45, 87, 99
lattice parameters, 311
LEDs, 281, 469, 481
LiAlO2, 161
LiGaO2, 155, 167
Madelung energy, 105
MBE, 51, 75, 495
mechanical properties, 201
metal-insulator-semiconductor, 475
MOCVD, 7, 13, 23, 81, 167, 187, 193, 207,
427, 475, 481
molecular dynamics, 111, 463
MOMBE, 123, 385
nanocrystals, 39
negative electron affinity (NEA), 437
nitridation, 69, 161, 193
optical gain, 237, 251
oxygen, 137
phase diagram, 81
phonons, 231
photoluminescence, 7, 39, 63, 123, 131, 237, 293, 299
plasma
cleaning, 193
damage, 385
ECR, 355
electron-hole, 237
ICP, 355, 367, 393
RF, 51, 305
precursors, 39, 45, 93
pulsed laser deposition, 87, 99
quantum wells, 213, 251, 275, 293, 299, 481
Raman, 23, 213, 225
RBS, 275
RF plasma, 51
Si, 269
SiC, 3, 287, 317, 475
SiCN, 31
SIMS, 3, 183, 275, 281
solar cells, 57
spinel, 207
stacking faults, 179, 293
strain, 75, 219, 243, 299, 445
surface roughness, 275
surfactant, 75
TEM, 167, 287, 293, 317, 323
transport, 463uv photoelectron spectroscopy, 437
X-ray
diffraction, 305
photoelectron diffraction, 193, 263
zinc, 137
ZnO, 3