PART I: GROWTH AND DOPING
- Impurity Contamination of GaN Epitaxial Films From the
Sapphire, SiC, and ZnO Substrates page 3
- Galina Popovici, Wook Kim, Andrei Botchkarev, Haipeng Tang, James
Solomon, and Hadis Morkoç
- Reliable, Reproducible, and Efficient MOCVD of III-Nitrides
in Production Scale Reactors page 7
- B. Wachtendorf, R. Beccard, D. Schmitz, H. Jürgensen, O.
Schön, M. Heuken, and E. Woelk
- *Growth and Characterization of In-Based Nitride
Compounds and Their Double Heterostructures page 13
- V.A. Joshkin, J.C. Roberts, E.L. Piner, M.K. Behbehani, F.G.
McIntosh, L. Wang, S. Lin, I. Shmagin, S. Krishnankutty, R.M. Kolbas, N.A.
El-Masry, and S.M. Bedair
- MOVPE Growth and Characterization of AlxGa1-xN
Layers
on Sapphire page 23
- S. Clur, O. Briot, J.L. Rouvire, A. Andenet, Y-M. Le Vaillant, B.
Gil, R.L. Aulombard, J.F. Demangeot, J. Frandon, and M. Renucci
- Growth of Ternary Silicon Carbon Nitride as a New Wide
Bandgap Material page 31
- L.C. Chen, C.K. Chen, D.M. Bhusari, K.H. Chen, S.L. Wei, Y.F. Chen,
Y.C. Jong, D.Y. Lin, C.F. Li, and Y.S. Huang
- New Precursor Routes to Nanocrystalline
Cubic/Hexagonal Gallium Nitride, GaN page 39 full text available
- R.L. Wells, J.F. Janik, W.L. Gladfelter, J.L. Coffer, M.A. Johnson,
and B.D. Steffey
- Toward Growing III-V Clusters With Metalorganic
Precursors page 45
- A. Demchuk, J. Porter, and B. Koplitz
- Optimization of III-N Based Devices Grown by RF Atomic
Nitrogen Plasma Using In Situ Cathodoluminescence page 51
- J.M. Van Hove, P.P. Chow, J.J. Klaassen, R. Hickman, II, A.M.
Wowchak, D.R. Croswell, and C. Polley
- InxGa(1-x)N Alloys as Electronic
Materials page 57
- O.K. Semchinova, S.E. Alexandrov, H. Neff, and D. Uffmann
- Surface Preparation and Growth Condition Dependence
of Cubic GaN Layer on (001) GaAs by Hydride Vapor-
Phase Epitaxy page 63
- H. Tsuchiya, K. Sunaba, S. Yonemura, T. Suemasu, and F.
Hasegawa
- Growth of GaN Thin Films on Sapphire Substrate by Low-
Pressure MOCVD page 69
- M. Ishida, T. Hashimoto, T. Takayama, O. Imafuji, M. Yuri, A.
Yoshikawa, K. Itoh, Y. Terakoshi, T. Sugino, and J. Shirafuji
- MBE Growth of Strain Engineered GaN Thin Films Utilizing a
Surfactant page 75 full text available
- R. Klockenbrink, Y. Kim, M.S.H. Leung, C. Kisielowski, J.
Krüger, G.S. Sudhir, M. Rubin, and E.R. Weber
- Quasi-Thermodynamic Analysis of Metalorganic Vapor-
Phase Epitaxy of GaN page 81
- Shukun Duan and Dacheng Lu
- Aluminum Nitride Thin Films Grown by Plasma-Assisted
Pulsed Laser Deposition on Si Substrates page 87
- M. Okamoto, T. Ogawa, Y. Mori, and T. Sasaki
- Pyrolytic Preparation of Gallium Nitride From
[Ga(NEt2)3]2
and Its Ammonolysis Compound page 93
- Seiichi Koyama, Yoshiyuki Sugahara, and Kazuyuki Kuroda
- Pulsed Laser Deposition of Gallium Nitride on Sapphire page 99
- V. Talyansky, R.D. Vispute, R.P. Sharma, S. Choopun, M.J. Downes, T.
Venkatesan, Y.X. Li, L.G. Salamanca-Riba, M.C. Wood, R.T. Lareau, and K.A.
Jones
- Control of Valence States by a Codoping Method in
p-Type GaN Materials page 105
- T. Yamamoto and H. Katayama-Yoshida
- Structure, Electronic Properties, Defects, and Doping of AlN
Using a Self-Consistent Molecular-Dynamics Method page 111
- Petra Stumm and D.A. Drabold
- Spectroscopic Identification of the Acceptor-Hydrogen
Complex in Mg-Doped GaN Grown by MOCVD page 117
- W. Götz, M.D. McCluskey, N.M. Johnson, D.P. Bour, and E.E.
Haller
- Incorporation and Optical Activation of Er in Group III-N
Materials Grown by Metalorganic Molecular-Beam Epitaxy page 123
- J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, S.M. Donovan, U.
Hömmerich, M. Thaik, X. Wu, F. Ren, R.G. Wilson, and J.M.
Zavada
- Site-Selective Photoluminescence Excitation and
Photoluminescence Spectroscopy of Er-Implanted
Wurtzite GaN page 131
- S. Kim, S.J. Rhee, D.A. Turnbull, X. Li, J.J. Coleman, and S.G.
Bishop
- Gallium Nitride Doped With Zinc and Oxygen - The Crystal
for the Blue Polarized Light-Emitting Diodes page 137
- V.G. Sidorov, A.G. Drezhuk, M.V. Zaitsev, and D.V. Sidorov