PART V: DEVICE PERFORMANCE AND DESIGN

*Valence Band Physics in Wurtzite GaN page 445

T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, M. Yamaguchi, T. Yagi, and S. Nakamura

Comparison of Electron and Hole Initiated Impact Ionization in Zinc Blende and Wurtzite Phase Gallium Nitride page 457

E. Bellotti, I.H. Oguzman, J. Kolnik, K.F. Brennan, R. Wang, and P.P. Ruden

Molecular-Dynamics Simulation of Transport in Diamond and GaN: Role of Collective Excitations page 463

N.M. Miskovsky, P.B. Lerner, and P.H. Cutler

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes page 469

K. Yang, H.T. Shi, B. Shen, R. Zhang, Z.Z. Chen, P. Chen, and Y.D. Zheng

Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC MIS Structures page 475

C.C. Tin, A. Gichuhi, M.J. Bozack, C.G. Shannon, and C.K. Teh

MOCVD Growth of High Output Power InGaN Multiple- Quantum-Well Light-Emitting Diode page 481

P. Kozodoy, A. Abare, R.K. Sink, M. Mack, S. Keller, S.P. DenBaars, U.K. Mishra, and D. Steigerwald

*Theory of Gain in Group-III Nitride Lasers page 487

W.W. Chow, A.F. Wright, A. Girndt, F. Jahnke, and S.W. Koch

Growth and Characterization of Thermal Oxides on Gallium Nitride page 495

Scott D. Wolter, Suzanne E. Mohney, Hari Venugopalan, Debra L. Waltemyer, and Brian P. Luther