PART IV: PROCESSING

*Processing Challenges for GaN-Based Photonic and Electronic Devices page 331

S.J. Pearton, F. Ren, R.J. Shul, J.C. Zolper, and A. Katz

*Invited Paper

Photoelectrochemical Etching of GaN page 349

C. Youtsey, G. Bulman, and I. Adesida

*Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas page 355

R.J. Shul, R.D. Briggs, J. Han, S.J. Pearton, J.W. Lee, C.B. Vartuli, K.P. Killeen, and M.J. Ludowise

Etch Characteristics of GaN Using Inductively-Coupled Cl₂/HBr and Cl₂/Ar Plasmas page 367

H.S. Kim, Y.J. Lee, Y.H. Lee, J.W. Lee, M.C. Yoo, T.I. Kim, and G.Y. Yeom

Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching page 373

Jae-Won Lee, Hyong-Soo Park, Yong-Jo Park, Myong-Cheol Yoo, Tae-Il Kim, Hyeon-Soo Kim, and Geun-Yong Yeom

Development of GaN and InGaN Gratings by Dry Etching page 379

J.W. Lee, J. Hong, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, and P.F. Sciortino, Jr.

Plasma Damage Effects in InAlN Field-Effect Transistors page 385

F. Ren, J.R. Lothian, Y.K. Chen, J.D. MacKenzie, S.M. Donovan, C.R. Abernathy, C.B. Vartuli, J.W. Lee, S.J. Pearton, and R.G. Wilson

ICP Dry Etching of III-V Nitrides page 393 full text available

C.B. Vartuli, J.W. Lee, J.D. MacKenzie, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul, C. Constantine, C. Barratt, A. Katz, A.Y. Poyakov, M. Shin, and M. Skowronski

Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°C page 401 full text available

J.C. Zolper, J. Han, R.M. Biefeld, S.B. Van Deusen, W.R. Wampler, S.J. Pearton, J.S. Williams, H.H. Tan, R.J. Karlicek, Jr., and R.A. Stall

Recovery of Structural Defects in GaN After Heavy Ion Implantation page 407

C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis, and H. Hofsöss

Current Transport in W and WSi_x Ohmic Contacts to InGaN and InN page 413 full text available

C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, M.L. Lovejoy, R.J. Shul, J.C. Zolper, A.G. Baca, M. Hagerott-Crawford, K.A. Jones, and F. Ren

Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN page 421

D.J. King, L. Zhang, J.C. Ramer, S.D. Hersee, and L.F. Lester

Low Resistance Contacts to p-Type GaN page 427

Taek Kim, Jinseok Khim, Suhee Chae, and Tae-Il Kim

Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride page 431 full text available

H.S. Venugopalan, S.E. Mohney, B.P. Luther, J.M. DeLucca, S.D. Wolter, J.M. Redwing, and G.E. Bulman

Electron Field Emission From Aluminum Nitride page 437

D.P. Malta, G.G. Fountain, J.B. Posthill, T.P. Humphreys, C. Pettenkofer, and R.J. Markunas