PART III: CHARACTERIZATION
- Mechanical Properties of Gallium Nitride and Related
Materials page 201
- M.D. Drory
- Mosaic Structure and Cathodoluminescence of GaN
Epilayer Grown by LP-MOVPE page 207
- Shukun Duan, Xuegong Teng, Yenran Li, Yutian Wang, Peide Han, and
Dacheng Lu
- Resonant Raman Scattering in GaN/Al0.15Ga0.85N and
InyGa1-yN/GaN/AlxGa1-xN
Heterostructures page 213
- D. Behr, R. Niebuhr, H. Obloh, J. Wagner, K.H. Bachem, and U.
Kaufmann
- Raman Scattering and Photoluminescence of Mg-Doped
GaN Films Grown by Molecular-Beam Epitaxy page 219
- G. Popovici, G.Y. Xu, A. Botchkarev, W. Kim, H. Tang, A. Salvador,
R. Strange, J.O. White, and H. Morko
- High-Pressure Raman Scattering of Biaxially Strained GaN
on GaAs page 225
- H. Siegle, A.R. Go-i, C. Thomsen, C. Ulrich, K. Syassen, B.
Schöttker, D.J. As, and D. Schikora
- Electron-Phonon Scattering in Very High Electric Fields page 231
- B.K. Ridley
- Optical-Gain Measurements on GaN and AlxGa1-xN
Heterostructures page 237
- L. Eckey, J. Holst, V. Kutzer, A. Hoffmann, I. Broser, O. Ambacher,
M. Stutzmann, H. Amano, and I. Akasaki
- Optical Anisotropy of the Optical Response for Strained
GaN Epilayers Grown Along the <10-10> Direction page 243
- A. Andenet, B. Gil, Y-M. Le Vaillant, S. Clur, O. Briot, and R.L.
Aulombard
- Electronic and Optical Properties of Bulk GaN and
GaN/AlGaN Quantum-Well Structures page 251
- M. Suzuki and T. Uenoyama
- X-ray Photoelectron Diffraction Measurements of
Hexagonal GaN(0001) Thin Films page 263
- R. Denecke, J. Morais, C. Wetzel, J. Liesegang, E.E. Haller, and
C.S. Fadley
- A Chemical and Structural Study of the AlN-Si Interface page 269
- R. Beye and T. George
- Measurement of InxGa1-xN and
AlxGa1-xN Compositions by
RBS and SIMS page 275
- Y. Gao, J. Kirchhoff, S. Mitha, J.W. Erickson, C. Huang, and R.
Clark-Phelps
- Complete Characterization of
AlxGa1-xN/InxGa1-xN/GaN
Devices by SIMS page 281
- C. Huang, S. Mitha, J.W. Erickson, R. Clark-Phelps, Jack Sheng, and
Y. Gao
- TEM/HREM Analysis of Defects in GaN Epitaxial Layers
Grown by MOVPE on SiC and Sapphire page 287
- S. Ruvimov, Z. Liliental-Weber, C. Dieker, J. Washburn, M. Koike, H.
Amano, and I. Akasaki
- Luminescence Related to Stacking Faults in
Heteroepitaxially Grown Wurtzite GaN page 293
- M. Albrecht, S. Christiansen, G. Salviati, C. Zanotti-Fregonara,
Y.T. Rebane, Y.G. Shreter, M. Mayer, A. Pelzmann, M. Kamp, K.J. Ebeling, M.D.
Bremser, R.F. Davis, and H.P. Strunk
- Photoluminescence of Strain-Engineered MBE-Grown GaN
and InGaN Quantum-Well Structures page 299 full text available
- Joachim Krüger, Christian Kisielowski, Ralf Klockenbrink, G.S.
Sudhir, Yihwan Kim, Michael Rubin, and Eicke R. Weber
- Characterization of AlxGa1-xN Films Prepared by
Plasma-
Induced Molecular-Beam Epitaxy on c-Plane Sapphire page 305
- H. Angerer, O. Ambacher, M. Stutzmann, T. Metzger, R. Höpler,
E. Born, A. Bergmaier, and G. Dollinger
- Influence of Free Charge on the Lattice Parameters of
GaN and Other Semiconductors page 311
- M. Leszczynski, J. Baþk-Misiuk, J. Domagana, and T.
Suski
- HREM and CBED Studies of Polarity of Nitride Layers With
Prismatic Defects Grown Over SiC page 317
- P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, and H. Morko
- The Atomic Structure of the {10&*rparenbot;110} Inversion Domains in
GaN/Sapphire Layers page 323
- V. Potin, P. Ruterana, G. Nouet, A. Salvador, and H. Morko