PART II: SUBSTRATES AND SUBSTRATE EFFECTS

GaN Crystals Grown from a Liquid Phase at Reduced Pressure page 143

V.A. Ivantsov, V.A. Sukhoveev, and V.A. Dmitriev

Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Subatmospheric Pressures page 149

John C. Angus, Alberto Argoitia, Cliff C. Hayman, Long Wang, Jeffrey S. Dyck, and Kathleen Kash

Polar-Twinned Defects in LiGaO₂ Substrates Lattice Matched With GaN page 155

Takao Ishii, Yasuo Tazoh, and Shintaro Miyazawa

Substrate Effects on the Growth of InN page 161

S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, P.H. Holloway, F. Ren, J.M. Zavada, and B. Chai

Microstructures of GaN Films Grown on a LiGaO₂ New Substrate by Metalorganic Chemical Vapor Deposition page 167

Jing-Hong Li, Olga M. Kryliouk, Paul H. Holloway, Timothy J. Anderson, and Kevin S. Jones

Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters page 173

Y-M. Le Vaillant, S. Clur, A. Andenet, O. Briot, B. Gil, R.L. Aulombard, R. Bisaro, J. Olivier, O. Durand, and J-Y. Duboz

Excitons Bound to Stacking Faults in Wurtzite GaN page 179

Y.T. Rebane, Y.G. Shreter, and M. Albrecht

Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (SIMS) page 183

Salman Mitha, Robert Clark-Phelps, Jon W. Erickson, Y. Gao, Wook Kim, and Hadis Morko

Initial Stages of MOCVD Growth of Gallium Nitride Using a Multistep Growth Approach page 187

J.T. Kobayashi, N.P. Kobayashi, P.D. Dapkus, X. Zhang, and D.H. Rich

Plasma Cleaning and Nitridation of Sapphire Substrates for Al_xGa_1-xN Epitaxy as Studied by ARXPS and XPD page 193 full text available

M. Seelmann-Eggebert, H. Zimmermann, H. Obloh, R. Niebuhr, and B. Wachtendorf