Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
Eva M. Campo , G. S. Cargill III
Lehigh University
Milan Pophristic
EMCORE Corporation
Ian Ferguson
Georgia Institute of Technology
This article was received on Thursday, July 1, 2004 and
accepted on Tuesday, November 30, 2004. Abstract
Monochromatic
CL imaging, CL spectra, WDS spectra, and EDS spectra and imaging demonstrate
that electron beam bombardment of LEO-GaN causes decrease of near band edge
cathodoluminescence intensity that cannot be attributed to absorption in a
growing carbon contamination layer. An alternative explanation is needed, such
as generation of defects, or charge injection and buildup of internal electric
fields, caused by electron beam bombardment.