Figures

Figure 1

Current-voltage characteristics of the surface-passivated AlGaN/GaN HFET at two different ambient temperatures 25°C (squares) and 250°C (crosses), respectively.

Figure 2

Measured saturation current at Vg=0V as a function of the ambient temperature. The data are normalized to the current value at room temperature.

Figure 3

Measured transconductance as a function of the gate bias at different ambient temperature.

Figure 4

Simulated current-voltage characteristics for GaN-based field-effect transistor at two different temperatures 25°C (solid curves) and 250°C (dashed curves), respectively.

© 2004 The Materials Research Society