The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors


W.L. Liu, V.O. Turin, A.A. Balandin
Nano-Device Laboratory, Department of Electrical Engineering, University of California - Riverside

Y.L. Chen, K.L. Wang
Device Research Laboratory,Electrical Engineering Department,University of California - Los Angeles.

This article was received on Friday, September 3, 2004 and accepted on Friday, November 19, 2004.

Abstract

We have studied experimentally the effect of ambient temperature on performance of the surface-passivated Al0.2Ga0.8N/GaN heterostructure field-effect transistors in the temperature range from 25°C to 250°C. The measured data have been compared with physics-based modeling of the GaN transistor characteristics under different ambient temperatures. The experimental data, showing about 33% degradation in the saturation current with a temperature increase from 25°C to 250°C, agrees well with the results of simulations performed using ISE DESSIS software. Obtained results and analytical extrapolations can be used for predicting device performance in changing environments, as well as for optimization of the device structure.

Outline

  • Introduction
  • Experiment
  • Physics-Based Modeling
  • Results
  • Conclusions
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 9, 7(2004).

    last updated Friday, November 19, 2004 4:57:05 PM.

    © 2004 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research