Al

N

C

W

W

slow reaction at grain boundaries

no reaction with N₂

forms WC at 1400 to 1800 °C [34]

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Mo

forms a low temperature eutectic at 1760 °C [34]

self-limited

forms MoC at 1200 to 1400 °C [34]

N/A

Ta

powder reacts with AlN and forms TaN [35]

forms TaN at 1100-1200 °C [34]

forms TaC at 1300 to 1500 °C [34]

N/A

C

incorporates into AlN [36]

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forms WC

WC

particles decompose in molten Al [30]

stable in N₂

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NbC

particles decompose in molten Al [30]

converts to the nitride with conversion <5 %

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carbon from NbC reacts with W

TaC

interfacial reactions between Al and film to form Al₄C₃ and TaAl₃ [29]

stable in N₂ up to 3315 °C [37]

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carbon from TaC reacts with W

TiC

interfacial reactions between Al and film to form TiAl₃ [29]

converts to the nitride between 1000-1300 °C [38]

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carbon from TiC reacts with W

HfC

less tendency to react with Al than TaC, NbC and TiC [31]

the maximum N contamination < 1% at 2500 °C in 1 atm of N₂ [39]

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carbon from HfC reacts with W

BN

AlN does not wet or react with BN

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reacts with graphite above 2200 °C

reacts with W above 1100 °C [35]

TiB₂

high stability in Al vapor [40]

surface reaction with N₂ and forms TiN above 1750 °C [41]

interacts slightly (about 1%) at 2200 °C [42]

forms W₂B above 1800 °C [43] [44]

TaN

interfacial reactions between Al and film to form AlN and TaAl₃ [29]

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reacts with graphite vapor above 1600 °C

N/A

TiN

reacts with Al at 1000 °C [45] and forms AlN and TiAl₃

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carbide phase forms at 1400 °C [46]

no reaction [47]

Vapor Phase

Solid Phase

Carbide/(Carbide+Nitride)

at 1700 °C to 2600 °C

Al (g), C (g), N₂

AlN(s), C(s)

N/A

C (g), CN(g), N₂

C(s)

N/A

B (g), C (g), CN (g), N₂

BN(s), B₄C(s), C(s)

<0.01%

Ti (g), C (g), CN (g), N₂

TiN(s), TiC(s), C(s)

60% ~ 95%

Nb (g), C (g), CN (g), N₂

NbN(s), NbC(s), C(s)

96% ~ 99%

W (g), C (g), CN (g), N₂

WC(s), C(s)

WC/(WC+W): >96%

Ta (g), C (g), CN (g), N₂

TaC(s), TaN(s), C(s)

>99%