Figures

Figure 1

Photocurrent vs. etch time for electrolytes of KOH, H3PO4, and HCl (left) and two types of mask geometry used in this study.

Figure 2

Photocurrent behavior in the carrier-limited regime.

Figure 3a

Whiskers remaining after 15 min. clean-up etch.

Figure 3b

Line-patterned GaN after 3 hr. PEC etch in H3PO4:H2O at pH=3 followed by 30 min. clean-up etch in 2M KOH.

Figure 4

PEC-etched AlGaN/GaN heterostructure showing good selectivity between the AlGaN and the GaN layers.

Figure 5

PEC-etched AlN/GaN/AlN sample after 3 hr. etch in 2:25 H3PO4:H2O.

© 2004 The Materials Research Society