Tables for MIJ-NSR Volume 9, Article 5

Tables

Table 1

Comparison of room temperature PEC etch rates for GaN and AlN under Hg arc illumination.

`Electrolyte`	`Concen.`	`I_ph` [µ`A]`	`GaN etch rate [nm/min]`	`AlN etch rate [nm/min]`
`KOH`	`0.02 M`	`150`	`42`	`0`
`KOH`	`0.04 M`	`150`	`51`	`0`
`H₃PO₄:H₂O`	`1:25`	`40`	`21`	`0`
`H₃PO₄:H₂O` `(NID GaN)`	`2:25`	`60`	`33`	`0`
`H₃PO₄:H₂O` `(~1E19 cm^-2 GaN)`	`2:25`	`60`	`83`	`0`
`HCl:H₂O`	`1:10`	`600`	`0`	`0`
`H₂SO₄:H₂O`	`1:25`	`20`	`0`	`0`
`B₄K₂O₇`	`0.1 M`	`175`	`0`	`-`
`B₄Na₂O₇`	`0.1 M`	`175`	`0`	`-`
`C₄H₆O₆:NaOH):H₂O`	`2:100`	`30`	`0`	`-`
`HBrpH=0.67):H₂O`	`2:100`	`45`	`0`	`-`

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