Figure 5

Changes in energy positions of Ga 3p and N 1s, measured relative to EF, as displayed in Figure 1 and 2. The energy position after the final surface treatment labelled (d) has been set to zero.


top        text     Figure 4     Figure 6        endnotes

last updated Tuesday, October 18, 2005 1:33:58 PM.

© 2004-2005 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research