Figures

Figure 1

Processed laser structure on GaN single crystal substrate prior to cleavage and device separation.

Figure 2

SEM photograph of selectively etched laser structure. The etch pit density on this photograph is around 5·105 cm-2. The stripe width is 15µm, T = 300 K.

Figure 3

Details of the laser structure.

Figure 4

Emission wavelength of various laser diodes grown on bulk GaN substrates.

Figure 5

Current -voltage and current-light characteristics of a high-power, pulsed current operated laser diode. Red curve shows record-high current-light characteristic measured for another device.

Figure 6

Just below and just above threshold spectra of laser diode measured at room temperature under pulsed current condition (30 ns, 10 kHz). Threshold current 400 mA.

Figure 7

Temperature shift of the threshold current. The determined T0 parameter is equal to 94  K.

Figure 8

Temperature shift of the emission line.

Figure 9

Constant amplitude current, variable temperature, degradation test of pulse current operated laser diode.

© 2004 The Materials Research Society