Low dislocation density, high power InGaN laser diodes
Piotr Perlin , M. Leszczynski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski
High Pressure Research Center
L Gorczyca
AGH University of Technology
A. Bering, W. Krupczynski, I. Makarowa, R. Wisniewska, A. Libura
TopGaN Limited
This article was received on Tuesday, December 16, 2003 and
accepted on Wednesday, March 17, 2004. Abstract
We
used single crystals of GaN, obtained from high-pressure synthesis, as
substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV
laser diodes. The use of high-quality bulk GaN leads to the decrease of the
dislocation density to the low level of 105 cm-2, i.e.
two orders of magnitude better than typical for the Epitaxial Lateral
Overgrowth laser structures fabricated on sapphire. The low density and homogeneous
distribution of defects in our structures enables the realization of broad
stripe laser diodes. We demonstrate that our laser diodes, having 15 µm wide
stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long
pulses. This result, which is among the best ever reported for nitride lasers,
opens the path for the development of a new generation of high power laser
diodes.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 9, 3(2004).
last updated Thursday, March 18, 2004 11:55:43 AM.© 2004 The Materials Research Society
