Figures

Figure 1

Schematic diagram of the inductively heated sublimation reactor. T_t and T_b refer to the top and bottom crucible temperatures, respectively.

Figure 2

The effect of temperature on AlN growth observed in three samples: a) SEM image of the hexagonal features grown at T_G=1820-1830°C, EDX of these features (AlN_xSiC_y ); b) AlN single crystal growth at T_G=1870-1880°C; cracks due to thermal and mechanical stresses are evident; c) colorless and transparent AlN islands with flat c-faces grown at T_G=1920-1930°C.

Figure 3

The effect of growth time on AlN crystal morphology at T_G=1930°C and a source-to-seed distance of 10 mm. Left: AlN single crystal, 200-300 mm² large and 300-350 µm thick, after 15 hours of growth; Right: AlN single crystal, 200-300 mm² large and 650-700 µm thick, after 28 hours of growth.

Figure 4

Growth steps on the c-plane observed by an optical microscope.

Figure 5

SEM image of a cleaved cross-section of an AlN crystal (left) and XRD analysis (right).

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© 2004 The Materials Research Society