Figure 7

Incident angle dependence of Ga and In scattered intensity at the [11(-2)0] azimuth for In0.5Ga0.5N SQW. Variation of both the Ga and In signals indicates +c polarity judging from the CAICISS results on ZnO bulk given in Fig. 5. Indium atoms incorporated into an InxGa1-xN SQW were found to occupy substitutional Ga sites. [52]]


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