Incident angle dependence of Ga and In scattered intensity at the [110] azimuth for In0.5Ga0.5N SQW. Variation of both the Ga and In signals indicates +c polarity judging from the CAICISS results on ZnO bulk given in Fig. 5. Indium atoms incorporated into an InxGa1-xN SQW were found to occupy substitutional Ga sites. [52]]