TOF spectrum of the backscattered He+ ions used in the CAICISS analysis of an In0.5Ga0.5 SQW when the ion beam was irradiated at normal incidence to the sample. The inset depicts the TOF spectrum for In0.2Ga0.8N capped with 6-nm-thick GaN as a reference [after Ref. 51]. The In and Ga signals can be detected separately for each time-of-flight. The inset indicates how CAICISS analysis detects a region several nm deep below the surface.
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