Figure 22

Depth profiles of C^-, O^-, Al^-, Si^-, Ga^- and GaN^- for (a) +c GaN and (b) -c GaN films of 1µm in thickness. The intensities of impurities normalized to the GaN^- count are listed at the bottom of each figure. The values normalized to the Ga+Ga⁺ ion in the brackets are evaluated from depth profiles using and O₂⁺ primary beam [after Ref. 135]. The Al, C and O impurities were more readily incorporated into -c GaN films.

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