Influence on surface morphology of HT-GaN films of the V/III ratio in AlN buffer layers deposited at 1040 °C; V/III ratio= (a) 600, (b) 1800, (c) 6800, and (d) 13700. [127] ] A lower V/III ratio was required for the deposition of AlN buffer layer in order to obtain +c GaN film.
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