Variation of (0002) peak intensity of LT-GaN (open circles) and AlN (closed circles) buffer layers of 20nm thickness as a function of annealing time. The intensity was enhanced due to the crystallization of the samples induced by the annealing, and it subsequently decreased due to the layer being thinned by sublimation. This indicates that the effects of mass transportation and sublimation are smaller for AlN buffer layers.
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