AFM images of annealed buffer layers on nitrided sapphire substrates before (on the left) and after (on the right) dipping in KOH solution for each time stated. (a) The sample deposited under a V/III ration of 20 000 and annealed in the H2 and N2 mixed ambient for 20min, and (b) the sample deposited under a V/III ratio of 5000 and annealed in an N2 ambient for 20min. [after Ref. 117]
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