Figure 12

Incident angular dependence of Ga signal intensity at [110] azimuth of He⁺ beam in CAICISS analysis for a 210nm GaN buffer layer on nitrided sapphire: (a) as-deposited, (b)10min, (c) 20min, and (d) 30min annealing time. The lines in (c) and (d) are calculated according to the weight ratios of the +c:-c polarity material as being 5:5 and 2:8, respectively, assuming that they are of the same crystal quality i.e., the same intensity of CAICISS signal for +c and -c domains. The sharpening peak in (b) indicates crystallization, and the peak splitting at 72° in (c) suggests the existence of -c domains that are becoming exposed due to the evaporation of the buffer layer. [after Ref. 118]

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