Angular dependence of Ga signal intensity for the buffer layers in CAICISS analysis: (a) as-deposited 20-nm buffer layer on non-nitrided sapphire, (b) as-deposited 20-nm buffer layer on nitirided sapphire and (C) annealed buffer layer of (b). The polarity of a buffer layers on nitrided sapphire substrates changed from +c to -c polarity, while there was no change for buffer layers on non-nitrided sapphire substrates. [after Ref. 35]. This is the first determination of the polarity for LT-GaN buffer layers, which has led to an understanding of the correlation between the MOCVD process and the polarity.
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