Volume 9

1. Review of polarity determination and control of GaN
M. Sumiya, S. Fuke.

2. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar.

3. Low dislocation density, high power InGaN laser diodes
Piotr Perlin , M. Leszczynski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski, L. Gorczyca, A. Bering, W. Krupczynski, I. Makarowa, R. Wisniewska, A. Libura.

4. Preparation of stoichiometric GaN(0001)-1x1: an XPS study
S.M. Widstrand, K.O. Magnusson, L.S.O. Johansson, E. Moons, M. Gurnett, H.W. Yeom, H. Miki, M. Oshima.

5. Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
JA. Grenko, CL. Reynolds Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis, Z. Sitar.

6. The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball , H. M. Meyer III.

7. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
W.L. Liu, V.O. Turin, A.A. Balandin, Y.L. Chen, K.L. Wang.

8. Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
Eva M. Campo , G. S. Cargill III, Milan Pophristic, Ian Ferguson.