Figures

Figure 1

Epitaxial layer structure of the designed AlGaN RCE Schottky PD.

Figure 2

Measured and simulated spectral reflectivity of the RCE-PD wafer.

Figure 3

Typical I-V characteristics of 100x100 µm2 Au and ITO-Schottky RCE-PDs.

Figure 4

Measured dark current density of a 100x100 µm2 ITO-Schottky PD.

Figure 5

Measured spectral quantum efficiency of Au and ITO-Schottky RCE-PDs.

Figure 6

Spectral responsivity curves of biased Au and ITO-Schottky RCE-PD samples.

Figure 7

Pulse response of a 150x150 µm2 Au-Schottky RCE-PD as a function of reverse bias.

Figure 8a

The area dependence of pulse responses measured at 357 nm. (a) Au-Schottky RCE-PD

Figure 8b

The area dependence of pulse responses measured at 357 nm. (b) ITO-Schottky RCE-PD

Figure 9a

Temporal pulse responses as a function of device areas measured at 267 nm. (a) Au-Schottky RCE-PD.

Figure 9b

Temporal pulse responses as a function of device areas measured at 267 nm. (b) ITO-Schottky RCE-PD

Figure 10a

Measured pulse-width variation with device area under 357 nm and 267 nm illumination. (a)Au-Schottky RCE-PD .

Figure 10b

Measured pulse-width variation with device area under 357 nm and 267 nm illumination. (b) ITO-Schottky RCE-PD.

Figure 11

Normalized pulse responses of 30 µm-diameter Au and ITO-Schottky RCE-PDs with 77 ps and 154 ps FWHM respectively. Inset shows the corresponding FFT curves.

© 2003 The Materials Research Society