High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur
Bilkent University Dept. of Electrical and Electronics Engineering
Ibrahim Kimukin, Ekmel Ozbay
Bilkent University Dept. of Physics
This article was received on Friday, September 19, 2003 and
accepted on Thursday, October 30, 2003. Abstract
We
have designed, fabricated and tested resonant cavity enhanced visible-blind
AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was
formed with a 20 pair AlN/Al0.2Ga0.8N Bragg mirror. The
devices were fabricated using a microwave compatible fabrication process. Au
and indium-tin-oxide (ITO) thin films were used for Schottky contact formation.
ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046
A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed
measurements at 357 nm resulted in fast pulse responses with pulse widths as
short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 8, 8(2003).
last updated Wednesday, November 5, 2003 11:28:24 AM.© 2003 The Materials Research Society
