Figures

Figure 1

Schematic of n and p-GaN Schottky structures.

Figure 2a

I-V characteristics from n-GaN exposed to RIE for 30 sec at different RF powers. I-V characteristics of control samples are also shown.

Figure 2b

I-V characteristics from n-GaN exposed to RIE for 30 sec at different PA-RIE for the same conditions. I-V characteristics of control samples are also shown.

Figure 3

I-V characteristics of n-type GaN-based Schottky diodes fabricated using RIE and PA-RIE for 2 min at 200W RF power (-300 self dc-bias), 30 mTorr and 10 sccm Cl2/10 sccm BCl3/10 sccm N2. I-V characteristic of control sample is also shown.

Figure 4

Variation of reverse breakdown voltage (VB) and forward turn-on voltage (VF) as a function of RF power for n-type GaN-based Schottky diodes processed by RIE and PA-RIE for 30 s using 10 sccm Cl2/10 sccm BCl3/10 sccm N2 at 30 mTorr. VB and VF of control sample are also shown. Lines are a guide to the eye only.

Figure 5

Variation of reverse breakdown voltage (VB) and forward turn-on voltage (VF) as a function of etch time for n-type GaN-based Schottky diodes processed by RIE and PA-RIE at 200 W RF power using 10 sccm Cl2/10 sccm BCl3/10 sccm N2 at 30 mTorr (VB and VF of control sample are also shown).

Figure 6

I-V Characteristics from p-GaN structures exposed to Cl2/N2 RIE at 30 mTorr for 3 min as a function of RF power.

© 2003 The Materials Research Society