Figures

Figure 1

Schematic of n and p-GaN Schottky structures.

Figure 2a

I-V characteristics from n-GaN exposed to RIE for 30 sec at different RF powers. I-V characteristics of control samples are also shown.

Figure 2b

I-V characteristics from n-GaN exposed to RIE for 30 sec at different PA-RIE for the same conditions. I-V characteristics of control samples are also shown.

Figure 3

I-V characteristics of n-type GaN-based Schottky diodes fabricated using RIE and PA-RIE for 2 min at 200W RF power (-300 self dc-bias), 30 mTorr and 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂. I-V characteristic of control sample is also shown.

Figure 4

Variation of reverse breakdown voltage (V_B) and forward turn-on voltage (V_F) as a function of RF power for n-type GaN-based Schottky diodes processed by RIE and PA-RIE for 30 s using 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂ at 30 mTorr. V_B and V_F of control sample are also shown. Lines are a guide to the eye only.

Figure 5

Variation of reverse breakdown voltage (V_B) and forward turn-on voltage (V_F) as a function of etch time for n-type GaN-based Schottky diodes processed by RIE and PA-RIE at 200 W RF power using 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂ at 30 mTorr (V_B and V_F of control sample are also shown).

Figure 6

I-V Characteristics from p-GaN structures exposed to Cl₂/N₂ RIE at 30 mTorr for 3 min as a function of RF power.

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© 2003 The Materials Research Society