Figure 5

Variation of reverse breakdown voltage (V_B) and forward turn-on voltage (V_F) as a function of etch time for n-type GaN-based Schottky diodes processed by RIE and PA-RIE at 200 W RF power using 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂ at 30 mTorr (V_B and V_F of control sample are also shown).

top        text     Figure 4     Figure 6        tables        endnotes

© 2003 The Materials Research Society