Figure 4

Variation of reverse breakdown voltage (V_B) and forward turn-on voltage (V_F) as a function of RF power for n-type GaN-based Schottky diodes processed by RIE and PA-RIE for 30 s using 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂ at 30 mTorr. V_B and V_F of control sample are also shown. Lines are a guide to the eye only.

top        text     Figure 3     Figure 5        tables        endnotes

© 2003 The Materials Research Society