Figure 3

I-V characteristics of n-type GaN-based Schottky diodes fabricated using RIE and PA-RIE for 2 min at 200W RF power (-300 self dc-bias), 30 mTorr and 10 sccm Cl₂/10 sccm BCl₃/10 sccm N₂. I-V characteristic of control sample is also shown.

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